View source for 18519571. COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT simplified abstract (BASF SE)

=COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT=


==Organization Name==

[[:Category:BASF SE|BASF SE]]


[[Category:BASF SE]]

==Inventor(s)==

[[:Category:Joannes Theodorus Valentinus Hoogboom of Ludwigshafen (DE)|Joannes Theodorus Valentinus Hoogboom of Ludwigshafen (DE)]][[Category:Joannes Theodorus Valentinus Hoogboom of Ludwigshafen (DE)]]

[[:Category:Jhih Jheng Ke of Taoyuan (TW)|Jhih Jheng Ke of Taoyuan (TW)]][[Category:Jhih Jheng Ke of Taoyuan (TW)]]

[[:Category:Che Wei Wang of Taoyuan (TW)|Che Wei Wang of Taoyuan (TW)]][[Category:Che Wei Wang of Taoyuan (TW)]]

[[:Category:Andreas Klipp of Ludwigshafen (DE)|Andreas Klipp of Ludwigshafen (DE)]][[Category:Andreas Klipp of Ludwigshafen (DE)]]

[[:Category:Yi Ping Cheng of Taoyuan (TW)|Yi Ping Cheng of Taoyuan (TW)]][[Category:Yi Ping Cheng of Taoyuan (TW)]]

==COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18519571 titled 'COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT

==Simplified Explanation==

The abstract describes a composition and process for selectively etching a layer containing an aluminum compound in the presence of a low-k material and/or a layer containing copper and/or cobalt in the manufacture of a semiconductor device.

* The composition allows for the selective etching of layers with aluminum compounds while preserving low-k materials and layers with copper and/or cobalt.
* The process involves contacting the layer containing an aluminum compound with the described composition to achieve the selective etching.
* This innovation enables the precise removal of specific layers in semiconductor device manufacturing, improving overall device performance and reliability.

== Potential Applications ==
The technology can be applied in the manufacturing of advanced semiconductor devices where selective etching of specific layers is required.

== Problems Solved ==
This technology solves the challenge of selectively etching layers with aluminum compounds while protecting adjacent layers made of low-k materials, copper, and/or cobalt.

== Benefits ==
The benefits of this technology include improved precision in semiconductor device manufacturing, enhanced device performance, and increased reliability due to selective etching capabilities.

== Potential Commercial Applications ==
The technology has potential commercial applications in the semiconductor industry for the production of high-performance and reliable semiconductor devices.

== Possible Prior Art ==
One possible prior art could be the use of traditional etching processes that may not offer the selectivity required to etch specific layers while preserving others.

=== Unanswered Questions ===

== How does this technology compare to existing selective etching methods in terms of efficiency and precision? ==
The article does not provide a direct comparison with existing selective etching methods, leaving the reader to wonder about the advantages of this new technology over current practices.

== What are the environmental implications of using this selective etching composition in semiconductor manufacturing processes? ==
The article does not address the environmental impact of using the described composition, leaving a gap in understanding the sustainability aspects of this technology.


==Original Abstract Submitted==

A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.



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