18519571. COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT simplified abstract (BASF SE)
Contents
- 1 COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing selective etching methods in terms of efficiency and precision?
- 1.11 What are the environmental implications of using this selective etching composition in semiconductor manufacturing processes?
- 1.12 Original Abstract Submitted
COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT
Organization Name
Inventor(s)
Joannes Theodorus Valentinus Hoogboom of Ludwigshafen (DE)
Andreas Klipp of Ludwigshafen (DE)
COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519571 titled 'COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT
Simplified Explanation
The abstract describes a composition and process for selectively etching a layer containing an aluminum compound in the presence of a low-k material and/or a layer containing copper and/or cobalt in the manufacture of a semiconductor device.
- The composition allows for the selective etching of layers with aluminum compounds while preserving low-k materials and layers with copper and/or cobalt.
- The process involves contacting the layer containing an aluminum compound with the described composition to achieve the selective etching.
- This innovation enables the precise removal of specific layers in semiconductor device manufacturing, improving overall device performance and reliability.
Potential Applications
The technology can be applied in the manufacturing of advanced semiconductor devices where selective etching of specific layers is required.
Problems Solved
This technology solves the challenge of selectively etching layers with aluminum compounds while protecting adjacent layers made of low-k materials, copper, and/or cobalt.
Benefits
The benefits of this technology include improved precision in semiconductor device manufacturing, enhanced device performance, and increased reliability due to selective etching capabilities.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of high-performance and reliable semiconductor devices.
Possible Prior Art
One possible prior art could be the use of traditional etching processes that may not offer the selectivity required to etch specific layers while preserving others.
Unanswered Questions
How does this technology compare to existing selective etching methods in terms of efficiency and precision?
The article does not provide a direct comparison with existing selective etching methods, leaving the reader to wonder about the advantages of this new technology over current practices.
What are the environmental implications of using this selective etching composition in semiconductor manufacturing processes?
The article does not address the environmental impact of using the described composition, leaving a gap in understanding the sustainability aspects of this technology.
Original Abstract Submitted
A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.
