View source for 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Cheng-Yen Yu of New Taipei City (TW)|Cheng-Yen Yu of New Taipei City (TW)]][[Category:Cheng-Yen Yu of New Taipei City (TW)]]

[[:Category:Po-Chi Wu of Zhubei City (TW)|Po-Chi Wu of Zhubei City (TW)]][[Category:Po-Chi Wu of Zhubei City (TW)]]

[[:Category:Yueh-Chun Lai of Taichung City (TW)|Yueh-Chun Lai of Taichung City (TW)]][[Category:Yueh-Chun Lai of Taichung City (TW)]]

==A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18517565 titled 'A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS

==Simplified Explanation==

The abstract describes a method of manufacturing a semiconductor device with a Fin FET, involving the formation of a fin structure, isolation insulating layer, gate structure, fin mask layer, and epitaxial source/drain structure.

* Formation of a fin structure extending in a first direction over a substrate.
* Formation of an isolation insulating layer exposing an upper portion of the fin structure.
* Formation of a gate structure crossing the first direction over a part of the fin structure.
* Formation of a fin mask layer on sidewalls of a source/drain region of the fin structure.
* Recessing the source/drain region of the fin structure.
* Using a plasma process combining etching and deposition processes to form a recess with a rounded corner shape in a cross-section along the second direction.

== Potential Applications ==
* Semiconductor manufacturing industry
* Electronic devices such as smartphones, tablets, and computers

== Problems Solved ==
* Improving performance and efficiency of semiconductor devices
* Enhancing the functionality of electronic devices

== Benefits ==
* Increased speed and performance of electronic devices
* Reduction in power consumption
* Enhanced overall functionality and reliability of semiconductor devices.


==Original Abstract Submitted==

In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, a plasma process combining etching and deposition processes is used to form a recess having a rounded corner shape in a cross section along the second direction.



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