View source for 18515908. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Shahaji B. More of Hsinchu City (TW)|Shahaji B. More of Hsinchu City (TW)]][[Category:Shahaji B. More of Hsinchu City (TW)]]

[[:Category:Chun Hsiung Tsai of Xinpu Township (TW)|Chun Hsiung Tsai of Xinpu Township (TW)]][[Category:Chun Hsiung Tsai of Xinpu Township (TW)]]

==METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18515908 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a method of manufacturing a semiconductor device involving the formation of an upper fin structure with alternating semiconductor layers, the creation of a sacrificial gate structure, etching of the source/drain region, formation of inner spacers, and the deposition of a source/drain epitaxial layer.

* Upper fin structure with alternating semiconductor layers and sacrificial gate structure are formed.
* Source/drain region of upper fin structure is etched to create a source/drain space.
* First semiconductor layers are laterally etched through the source/drain space.
* Inner spacers made of dielectric material are formed on the etched first semiconductor layers.
* Source/drain epitaxial layer is deposited in the source/drain space to cover the inner spacers.
* Part of the lower fin structure is etched to form a recess exposing a (111) surface.

== Potential Applications ==
* Semiconductor manufacturing industry
* Advanced electronic devices

== Problems Solved ==
* Enhanced performance of semiconductor devices
* Improved integration of components

== Benefits ==
* Increased efficiency in manufacturing process
* Higher functionality of semiconductor devices


==Original Abstract Submitted==

In a method of manufacturing a semiconductor device, an upper fin structure in which first semiconductor layers and second semiconductor layers are alternately stacked is formed over a lower fin structure, a sacrificial gate structure is formed over the upper fin structure, a source/drain region of the upper fin structure, which is not covered by the sacrificial gate structure, is etched thereby forming a source/drain space, the first semiconductor layers are laterally etched through the source/drain space, an inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers, and a source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. In etching the source/drain region, a part of the lower fin structure is also etched to form a recess, in which a (111) surface is exposed.



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