View source for 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Han-Jong Chia of Hsinchu City (TW)|Han-Jong Chia of Hsinchu City (TW)]][[Category:Han-Jong Chia of Hsinchu City (TW)]]

[[:Category:Sai-Hooi Yeong of Zhubei City (TW)|Sai-Hooi Yeong of Zhubei City (TW)]][[Category:Sai-Hooi Yeong of Zhubei City (TW)]]

==GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18510975 titled 'GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE

==Simplified Explanation==

The patent application describes an integrated chip with a unique data storage structure.

* The chip includes a first dielectric layer over a substrate.
* A first conductive structure is on top of the first dielectric layer.
* A data storage structure is located between the first dielectric layer and the first conductive structure.
* The data storage structure consists of a data storage layer and a grid structure.
* The grid structure has opposing sidewalls spaced across the width of the first conductive structure.
* The data storage layer is along the opposing sidewalls.
* The data storage layer is made of a first material, while the grid structure is made of a second material different from the first material.

== Potential Applications ==
* Data storage devices
* Integrated circuits
* Semiconductor technology

== Problems Solved ==
* Enhanced data storage capabilities
* Improved integration of components in a chip
* Increased efficiency in data processing

== Benefits ==
* Higher data storage density
* Improved data access speeds
* Enhanced overall performance of integrated chips


==Original Abstract Submitted==

Various embodiments of the present disclosure are directed towards an integrated chip including a first dielectric layer over a substrate. A first conductive structure overlies the first dielectric layer. A data storage structure is disposed between the first dielectric layer and the first conductive structure. The data storage structure comprises a data storage layer and a grid structure. The grid structure comprises a plurality of opposing sidewalls spaced across a width of the first conductive structure. The data storage layer is disposed along the plurality of opposing sidewalls. The data storage layer comprises a first material and the grid structure comprises a second material different from the first material.



[[Category:H10B51/10]]
[[Category:G11C11/22]]
[[Category:H10B51/30]]