View source for 18510402. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES simplified abstract (Intel Corporation)

=GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Tanuj Trivedi of Hillsboro OR (US)|Tanuj Trivedi of Hillsboro OR (US)]][[Category:Tanuj Trivedi of Hillsboro OR (US)]]

[[:Category:Rahul Ramaswamy of Portland OR (US)|Rahul Ramaswamy of Portland OR (US)]][[Category:Rahul Ramaswamy of Portland OR (US)]]

[[:Category:Jeong Dong Kim of Scappoose OR (US)|Jeong Dong Kim of Scappoose OR (US)]][[Category:Jeong Dong Kim of Scappoose OR (US)]]

[[:Category:Babak Fallahazad of Portland OR (US)|Babak Fallahazad of Portland OR (US)]][[Category:Babak Fallahazad of Portland OR (US)]]

[[:Category:Hsu-Yu Chang of Hillsboro OR (US)|Hsu-Yu Chang of Hillsboro OR (US)]][[Category:Hsu-Yu Chang of Hillsboro OR (US)]]

[[:Category:Ting Chang of Portland OR (US)|Ting Chang of Portland OR (US)]][[Category:Ting Chang of Portland OR (US)]]

[[:Category:Nidhi Nidhi of Hillsboro OR (US)|Nidhi Nidhi of Hillsboro OR (US)]][[Category:Nidhi Nidhi of Hillsboro OR (US)]]

[[:Category:Walid M. Hafez of Portland OR (US)|Walid M. Hafez of Portland OR (US)]][[Category:Walid M. Hafez of Portland OR (US)]]

==GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18510402 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBON CHANNEL STRUCTURES

==Simplified Explanation==

The abstract describes gate-all-around integrated circuit structures with dual nanowire/nanoribbon channel structures and methods of fabricating them. The structure includes two vertical arrangements of nanowires, with a dielectric cap over the first arrangement and the second arrangement staggered laterally with the first arrangement and the dielectric cap.

* Dual nanowire/nanoribbon channel structures in gate-all-around integrated circuit
* Two vertical arrangements of nanowires
* Dielectric cap over the first arrangement
* Second arrangement staggered laterally with the first arrangement and the dielectric cap

== Potential Applications ==
The technology can be applied in:
* Advanced semiconductor devices
* High-performance integrated circuits
* Nanoelectronics

== Problems Solved ==
This technology addresses:
* Enhanced performance and efficiency of integrated circuits
* Improved scalability of semiconductor devices
* Increased functionality of nanoelectronics

== Benefits ==
The benefits of this technology include:
* Higher speed and lower power consumption in integrated circuits
* Greater control and precision in semiconductor device fabrication
* Enhanced capabilities in nanoelectronics research and development

== Potential Commercial Applications ==
Optimizing SEO: Potential Commercial Applications of Dual Nanowire/Nanoribbon Channel Structures in Gate-All-Around Integrated Circuits

Some questions that are not answered by this article are:

== What are the specific materials used in fabricating these dual nanowire/nanoribbon channel structures?
Answer: The article does not provide information on the specific materials used in the fabrication process.

== How does the performance of integrated circuits with dual nanowire/nanoribbon channel structures compare to traditional structures?
Answer: The article does not discuss the performance comparison between circuits with dual nanowire/nanoribbon channel structures and traditional structures.


==Original Abstract Submitted==

Gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, and methods of fabricating gate-all-around integrated circuit structures having dual nanowire/nanoribbon channel structures, are described. For example, an integrated circuit structure includes a first vertical arrangement of nanowires above a substrate. A dielectric cap is over the first vertical arrangement of nanowires. A second vertical arrangement of nanowires is above the substrate. Individual ones of the second vertical arrangement of nanowires are laterally staggered with individual ones of the first vertical arrangement of nanowires and the dielectric cap.



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