View source for 18473492. OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:HOON Shin of Suwon-si (KR)|HOON Shin of Suwon-si (KR)]][[Category:HOON Shin of Suwon-si (KR)]]

[[:Category:JAEWOOK Lee of Seoul (KR)|JAEWOOK Lee of Seoul (KR)]][[Category:JAEWOOK Lee of Seoul (KR)]]

[[:Category:DONGHWEE Kim of Suwon-si (KR)|DONGHWEE Kim of Suwon-si (KR)]][[Category:DONGHWEE Kim of Suwon-si (KR)]]

[[:Category:RIHAE Park of Seoul (KR)|RIHAE Park of Seoul (KR)]][[Category:RIHAE Park of Seoul (KR)]]

==OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18473492 titled 'OPERATING METHOD OF MEMORY CONTROLLER, AND MEMORY DEVICE

==Simplified Explanation==

The abstract describes a memory device and operating method of a memory controller that involves performing a NOT operation for data of a cell. The method includes forming reference voltages in a bit line connected to the cell, sensing inversion data based on the voltages, and outputting the result of the NOT operation.

* Determining when a NOT operation for data of a cell is to be performed
* Forming reference voltages in a bit line connected to the cell
* Sensing inversion data based on the voltages
* Outputting the result of the NOT operation

== Potential Applications ==
This technology could be applied in various memory devices, such as flash memory, to improve data processing and storage capabilities.

== Problems Solved ==
This technology helps in efficiently performing NOT operations for data stored in memory cells, enhancing data processing speed and accuracy.

== Benefits ==
The benefits of this technology include faster data processing, improved memory controller efficiency, and enhanced overall performance of memory devices.

== Potential Commercial Applications ==
The potential commercial applications of this technology include use in consumer electronics, data storage systems, and other devices that rely on memory controllers for data processing.

== Possible Prior Art ==
One possible prior art for this technology could be memory devices with similar NOT operation capabilities, but with different methods of voltage sensing and data output.

=== Unanswered Questions ===

=== How does this technology compare to existing memory devices with NOT operation capabilities? ===
This article does not provide a direct comparison to existing memory devices with similar functionalities. 

=== What are the specific voltage ranges used in forming the reference voltages for the NOT operation in this technology? ===
The article does not specify the exact voltage ranges used in forming the reference voltages for the NOT operation.


==Original Abstract Submitted==

A memory device and an operating method of a memory controller are described in which the operating method includes determining that a NOT operation for data of a cell is to be performed by the memory device; forming, in a bit line connected to the cell, a reference voltage between a first voltage corresponding to the data and a second voltage corresponding to inversion data of the data; forming, in the bit line, a third voltage between the second voltage and the reference voltage by connecting the bit line and a bit line bar; forming the reference voltage in the bit line bar; and sensing the inversion data based on the third voltage formed in the bit line and the reference voltage formed in the bit line bar, wherein the inversion data comprises an output of the NOT operation for the data of the cell.



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