View source for 18469465. SELF-ALIGNED BACKSIDE INTERCONNECT (QUALCOMM Incorporated)

=SELF-ALIGNED BACKSIDE INTERCONNECT=


==Organization Name==

[[:Category:QUALCOMM Incorporated|QUALCOMM Incorporated]]


[[Category:QUALCOMM Incorporated]]

==Inventor(s)==

[[:Category:Yan Sun of San Diego CA US|Yan Sun of San Diego CA US]][[Category:Yan Sun of San Diego CA US]]

[[:Category:Shreesh Narasimha of Charlotte NC US|Shreesh Narasimha of Charlotte NC US]][[Category:Shreesh Narasimha of Charlotte NC US]]

==SELF-ALIGNED BACKSIDE INTERCONNECT==


This abstract first appeared for US patent application 18469465 titled 'SELF-ALIGNED BACKSIDE INTERCONNECT

==Original Abstract Submitted==

Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a gate stack extending along a first direction in a front portion of the semiconductor structure, the gate stack including a first gate structure; a first channel structure disposed through the first gate structure and extending along a second direction; a first source/drain (S/D) structure adjacent the first gate structure and electrically coupled to the first channel structure; a backside dielectric layer disposed in a back portion of the semiconductor structure opposing the front portion; and a backside conductive structure in contact with the first S/D structure and disposed at least partially in the back portion of the semiconductor structure and through the backside dielectric layer. The backside conductive structure has a length in the first direction greater than a width of the first channel structure in the first direction.



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[[Category:CPC_H10D64/017]]