View source for 18465183. TRANSISTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)

=TRANSISTOR STRUCTURE=


==Organization Name==

[[:Category:UNITED MICROELECTRONICS CORP.|UNITED MICROELECTRONICS CORP.]]


[[Category:UNITED MICROELECTRONICS CORP.]]

==Inventor(s)==

[[:Category:Shin-Hung Li of Nantou County (TW)|Shin-Hung Li of Nantou County (TW)]][[Category:Shin-Hung Li of Nantou County (TW)]]

[[:Category:Shan-Shi Huang of Hsinchu City (TW)|Shan-Shi Huang of Hsinchu City (TW)]][[Category:Shan-Shi Huang of Hsinchu City (TW)]]

==TRANSISTOR STRUCTURE==


This abstract first appeared for US patent application 18465183 titled 'TRANSISTOR STRUCTURE

==Original Abstract Submitted==

Provided is a transistor structure including a gate, a gate dielectric layer, a source region and a drain region. The gate is disposed on a substrate. The gate dielectric layer is disposed between the gate and the substrate. The source region and the drain region are respectively disposed at two opposite sides of the gate. From a top view above the substrate, the gate has two opposite edges in a first direction intersecting a second direction where a channel length of the transistor structure is located, and each of the two opposite edges has a non-linear shape.



[[Category:H01L29/423]]
[[Category:CPC_H01L29/4238]]