18465183. TRANSISTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
TRANSISTOR STRUCTURE
Organization Name
Inventor(s)
Shin-Hung Li of Nantou County (TW)
Shan-Shi Huang of Hsinchu City (TW)
TRANSISTOR STRUCTURE
This abstract first appeared for US patent application 18465183 titled 'TRANSISTOR STRUCTURE
Original Abstract Submitted
Provided is a transistor structure including a gate, a gate dielectric layer, a source region and a drain region. The gate is disposed on a substrate. The gate dielectric layer is disposed between the gate and the substrate. The source region and the drain region are respectively disposed at two opposite sides of the gate. From a top view above the substrate, the gate has two opposite edges in a first direction intersecting a second direction where a channel length of the transistor structure is located, and each of the two opposite edges has a non-linear shape.