View source for 18464375. METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT simplified abstract (NICHIA CORPORATION)

=METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT=


==Organization Name==

[[:Category:NICHIA CORPORATION|NICHIA CORPORATION]]


[[Category:NICHIA CORPORATION]]

==Inventor(s)==

[[:Category:Shun Kitahama of Tokushima-shi (JP)|Shun Kitahama of Tokushima-shi (JP)]][[Category:Shun Kitahama of Tokushima-shi (JP)]]

==METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18464375 titled 'METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT

==Simplified Explanation==

The method described in the patent application involves manufacturing a light-emitting element by preparing a semiconductor structure body with an n-side layer, a p-side layer, and an active layer in between. The process includes forming insulating films, creating an n-side opening, and adding an n-side electrode to the structure.

* Semiconductor structure body preparation:
  * Includes n-side layer, p-side layer, and active layer
  * N-side layer has first regions exposed from active layer and p-side layer

* Insulating film formation:
  * First insulating film on p-side layer between first regions
  * Second insulating film covering first regions, p-side layer, and first insulating film

* N-side opening creation:
  * Removing second insulating film on first regions and first insulating film
  * Forming n-side electrode in the n-side opening

* N-side electrode addition:
  * N-side electrode contacts first regions and first insulating film

== Potential Applications ==
The technology can be applied in the manufacturing of light-emitting elements for various electronic devices, such as displays, lighting systems, and optical sensors.

== Problems Solved ==
This method solves the problem of efficiently creating and integrating electrodes in semiconductor light-emitting elements, improving their performance and reliability.

== Benefits ==
* Enhanced performance of light-emitting elements
* Improved reliability and durability of electronic devices
* Simplified manufacturing process for semiconductor structures

== Potential Commercial Applications ==
Optimizing Light-Emitting Element Manufacturing Process for Enhanced Performance

== Possible Prior Art ==
There may be prior art related to methods for manufacturing light-emitting elements with improved electrode integration and performance. Research in semiconductor technology and device manufacturing could provide relevant information.

== Unanswered Questions ==

=== How does this method compare to existing techniques for manufacturing light-emitting elements? ===
The article does not provide a direct comparison with existing techniques, making it unclear how this method stands out in terms of efficiency, cost-effectiveness, and performance.

=== What specific electronic devices can benefit the most from this technology? ===
The potential applications section mentions various electronic devices, but it does not specify which ones would see the most significant improvements or innovations from the use of this technology.


==Original Abstract Submitted==

A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.



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