18464375. METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT simplified abstract (NICHIA CORPORATION)

METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT

Organization Name

NICHIA CORPORATION

Inventor(s)

Shun Kitahama of Tokushima-shi (JP)

METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18464375 titled 'METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT

Simplified Explanation

The method described in the patent application involves manufacturing a light-emitting element by preparing a semiconductor structure body with an n-side layer, a p-side layer, and an active layer in between. The process includes forming insulating films, creating an n-side opening, and adding an n-side electrode to the structure.

• Semiconductor structure body preparation:

 * Includes n-side layer, p-side layer, and active layer
 * N-side layer has first regions exposed from active layer and p-side layer

• Insulating film formation:

 * First insulating film on p-side layer between first regions
 * Second insulating film covering first regions, p-side layer, and first insulating film

• N-side opening creation:

 * Removing second insulating film on first regions and first insulating film
 * Forming n-side electrode in the n-side opening

• N-side electrode addition:

 * N-side electrode contacts first regions and first insulating film

Potential Applications

The technology can be applied in the manufacturing of light-emitting elements for various electronic devices, such as displays, lighting systems, and optical sensors.

Problems Solved

This method solves the problem of efficiently creating and integrating electrodes in semiconductor light-emitting elements, improving their performance and reliability.

Benefits

• Enhanced performance of light-emitting elements
• Improved reliability and durability of electronic devices
• Simplified manufacturing process for semiconductor structures

Potential Commercial Applications

Optimizing Light-Emitting Element Manufacturing Process for Enhanced Performance

Possible Prior Art

There may be prior art related to methods for manufacturing light-emitting elements with improved electrode integration and performance. Research in semiconductor technology and device manufacturing could provide relevant information.

Unanswered Questions

How does this method compare to existing techniques for manufacturing light-emitting elements?

The article does not provide a direct comparison with existing techniques, making it unclear how this method stands out in terms of efficiency, cost-effectiveness, and performance.

What specific electronic devices can benefit the most from this technology?

The potential applications section mentions various electronic devices, but it does not specify which ones would see the most significant improvements or innovations from the use of this technology.

Original Abstract Submitted

A method for manufacturing a light-emitting element includes: preparing a semiconductor structure body that includes: an n-side layer, a p-side layer, and an active layer positioned between the n-side layer and the p-side layer, where the n-side layer includes a plurality of first regions arranged in a first direction in a top view, the first regions exposed from the active layer and the p-side layer; forming a first insulating film on the p-side layer, between the first regions; forming a second insulating film to continuously cover the first regions, the p-side layer, and the first insulating film; forming an n-side opening in the second insulating film by removing the second insulating film on the first regions and on the first insulating film; and forming an n-side electrode in the n-side opening, the n-side electrode contacting the first regions and the first insulating film.