View source for 18446911. VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)

=VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Sohyeon Lee of Suwon-si (KR)|Sohyeon Lee of Suwon-si (KR)]][[Category:Sohyeon Lee of Suwon-si (KR)]]

[[:Category:Seongpil Chang of Suwon-si (KR)|Seongpil Chang of Suwon-si (KR)]][[Category:Seongpil Chang of Suwon-si (KR)]]

[[:Category:Sea Hoon Lee of Suwon-si (KR)|Sea Hoon Lee of Suwon-si (KR)]][[Category:Sea Hoon Lee of Suwon-si (KR)]]

[[:Category:Jaeduk Lee of Seongnam-si (KR)|Jaeduk Lee of Seongnam-si (KR)]][[Category:Jaeduk Lee of Seongnam-si (KR)]]

[[:Category:Tackhwi Lee of Suwon-si (KR)|Tackhwi Lee of Suwon-si (KR)]][[Category:Tackhwi Lee of Suwon-si (KR)]]

==VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18446911 titled 'VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF

==Simplified Explanation==

The abstract describes a vertical nonvolatile memory device with various layers and structures.

* The device includes a peripheral circuit portion with a memory cell driving circuit and connection wiring.
* There is a first hydrogen diffusion barrier layer above the peripheral circuit portion.
* A first insulating layer is above the first hydrogen diffusion barrier layer.
* A common source line layer is above the first insulating layer.
* A second hydrogen diffusion barrier layer is above the first insulating layer.
* A memory cell stack structure is above the common source line layer and the second hydrogen diffusion barrier layer.

== Potential Applications ==
The technology described in this patent application could be applied in:
* Solid-state drives (SSDs)
* Smartphones and other mobile devices
* Wearable technology
* Internet of Things (IoT) devices

== Problems Solved ==
This technology helps in:
* Increasing memory storage capacity
* Enhancing data retention and reliability
* Improving overall device performance

== Benefits ==
The benefits of this technology include:
* Faster data access speeds
* Lower power consumption
* Extended device lifespan

== Potential Commercial Applications ==
The potential commercial applications of this technology could be seen in:
* Memory chip manufacturing companies
* Electronics manufacturers
* Data storage companies

== Possible Prior Art ==
One possible prior art for this technology could be the development of vertical NAND (VNAND) memory technology, which also involves stacking memory cells vertically to increase storage capacity and performance.

== Unanswered Questions ==
=== How does this technology compare to other types of nonvolatile memory devices in terms of speed and reliability? ===
The article does not provide a direct comparison with other nonvolatile memory devices, so it is unclear how this technology stacks up against alternatives.

=== What are the potential challenges in implementing this technology on a large scale for commercial production? ===
The article does not address the potential challenges or limitations that may arise when scaling up the production of this technology for commercial use.


==Original Abstract Submitted==

A vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the peripheral circuit portion; a first insulating layer above the first hydrogen diffusion barrier layer; a common source line layer above the first insulating layer; a second hydrogen diffusion barrier layer above the first insulating layer; and a memory cell stack structure above the common source line layer and the second hydrogen diffusion barrier layer.



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[[Category:H10B41/27]]
[[Category:H10B41/40]]
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