18446911. VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Seongpil Chang of Suwon-si (KR)
Jaeduk Lee of Seongnam-si (KR)
VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446911 titled 'VERTICAL NONVOLATILE MEMORY DEVICE HAVING HYDROGEN DIFFUSION BARRIER LAYER AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes a vertical nonvolatile memory device with various layers and structures.
- The device includes a peripheral circuit portion with a memory cell driving circuit and connection wiring.
- There is a first hydrogen diffusion barrier layer above the peripheral circuit portion.
- A first insulating layer is above the first hydrogen diffusion barrier layer.
- A common source line layer is above the first insulating layer.
- A second hydrogen diffusion barrier layer is above the first insulating layer.
- A memory cell stack structure is above the common source line layer and the second hydrogen diffusion barrier layer.
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives (SSDs)
- Smartphones and other mobile devices
- Wearable technology
- Internet of Things (IoT) devices
Problems Solved
This technology helps in:
- Increasing memory storage capacity
- Enhancing data retention and reliability
- Improving overall device performance
Benefits
The benefits of this technology include:
- Faster data access speeds
- Lower power consumption
- Extended device lifespan
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Memory chip manufacturing companies
- Electronics manufacturers
- Data storage companies
Possible Prior Art
One possible prior art for this technology could be the development of vertical NAND (VNAND) memory technology, which also involves stacking memory cells vertically to increase storage capacity and performance.
Unanswered Questions
How does this technology compare to other types of nonvolatile memory devices in terms of speed and reliability?
The article does not provide a direct comparison with other nonvolatile memory devices, so it is unclear how this technology stacks up against alternatives.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges or limitations that may arise when scaling up the production of this technology for commercial use.
Original Abstract Submitted
A vertical nonvolatile memory device may include a peripheral circuit portion including a memory cell driving circuit and connection wiring; a first hydrogen diffusion barrier layer above the peripheral circuit portion; a first insulating layer above the first hydrogen diffusion barrier layer; a common source line layer above the first insulating layer; a second hydrogen diffusion barrier layer above the first insulating layer; and a memory cell stack structure above the common source line layer and the second hydrogen diffusion barrier layer.
