View source for 18432084. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Rohm Co., Ltd.|Rohm Co., Ltd.]]


[[Category:Rohm Co., Ltd.]]

==Inventor(s)==

[[:Category:Shinya Umeki of Kyoto-shi (JP)|Shinya Umeki of Kyoto-shi (JP)]][[Category:Shinya Umeki of Kyoto-shi (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18432084 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a semiconductor layer with active regions, IGBT regions, and diode regions. The dispersion degree of the diode regions with respect to the active region must fall within a specific range.

* The semiconductor device has a semiconductor layer with active, IGBT, and diode regions.
* The dispersion degree of the diode regions must be between 2 and 15, based on the formula Log(L/SD).

== Potential Applications ==
This technology could be applied in:
* Power electronics
* Renewable energy systems
* Electric vehicles

== Problems Solved ==
This technology helps in:
* Improving efficiency in power conversion
* Enhancing the performance of electronic devices
* Reducing energy losses in semiconductor devices

== Benefits ==
The benefits of this technology include:
* Higher efficiency in power conversion
* Improved reliability of electronic devices
* Reduced energy consumption

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Power electronics industry
* Electric vehicle manufacturing
* Renewable energy sector

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to semiconductor devices with optimized dispersion of diode regions.

== Unanswered Questions ==

=== How does this technology compare to existing semiconductor devices in terms of efficiency and performance? ===
This question can be answered through comparative studies and performance testing of the new semiconductor device against existing technologies.

=== What are the potential challenges in implementing this technology on a large scale in industrial applications? ===
This question can be addressed by conducting feasibility studies and analyzing the scalability of the technology for mass production and commercialization.


==Original Abstract Submitted==

A semiconductor device includes a semiconductor layer that has a first main surface at one side and a second main surface at another side and includes an active region, a plurality of IGBT regions that are formed in the active region, and a plurality of diode regions that are formed in the active region such as to be adjacent to the plurality of IGBT regions, and where when a total extension of boundary lines between the plurality of IGBT regions and the plurality of diode regions is represented by L, a total area of the plurality of diode regions is represented by SD, and a dispersion degree of the plurality of diode regions with respect to the active region is defined by a formula Log(L/SD), the dispersion degree is not less than 2 and not more than 15.



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