View source for 18370144. WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES simplified abstract (SKYWORKS SOLUTIONS, INC.)

=WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES=


==Organization Name==

[[:Category:SKYWORKS SOLUTIONS, INC.|SKYWORKS SOLUTIONS, INC.]]


[[Category:SKYWORKS SOLUTIONS, INC.]]

==Inventor(s)==

[[:Category:Guillaume Alexandre Blin of Carlisle MA (US)|Guillaume Alexandre Blin of Carlisle MA (US)]][[Category:Guillaume Alexandre Blin of Carlisle MA (US)]]

==WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18370144 titled 'WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES

==Simplified Explanation==

The patent application describes a transistor with two active regions and gate electrode fingers positioned over each active region.

* The transistor comprises a first source region, a first drain region, a first active region, a second drain region, a second active region, and gate electrode fingers.
* The first and second active regions have non-parallel directions of greatest extension.
* The first gate electrode finger is positioned over the first active region, and the second gate electrode finger is positioned over the second active region.

== Potential Applications ==
This technology could be applied in the development of high-performance electronic devices such as transistors for use in integrated circuits.

== Problems Solved ==
This technology helps in improving the efficiency and performance of transistors by optimizing the layout and design of the active regions and gate electrodes.

== Benefits ==
The benefits of this technology include enhanced transistor performance, increased speed, and improved reliability in electronic devices.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the production of advanced semiconductor devices for various industries such as telecommunications, computing, and consumer electronics.

== Possible Prior Art ==
One possible prior art for this technology could be the development of transistors with multiple active regions and gate electrodes in the field of semiconductor device manufacturing.

== Unanswered Questions ==
=== How does this technology compare to existing transistor designs in terms of performance and efficiency? ===
This article does not provide a direct comparison with existing transistor designs to evaluate the advantages and disadvantages of this new technology.

=== What are the specific manufacturing processes involved in producing transistors with non-parallel active regions and gate electrodes? ===
The article does not delve into the detailed manufacturing processes required to implement this innovative transistor design.


==Original Abstract Submitted==

A transistor comprising a first source region, a first drain region disposed on a first side of the first source region, a first active region being formed between the first source region and the first drain region, a second drain region disposed on a second side of the first source region, a second active region being formed between the first source region and the second drain region, directions of greatest extension of the first and second active regions being non-parallel, a first gate electrode finger disposed over the first active region, and a second gate electrode finger disposed over the second active region.



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