View source for 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Wooyoung Yang of Suwon-si (KR)|Wooyoung Yang of Suwon-si (KR)]][[Category:Wooyoung Yang of Suwon-si (KR)]]

[[:Category:Hyungjun Kim of Seoul (KR)|Hyungjun Kim of Seoul (KR)]][[Category:Hyungjun Kim of Seoul (KR)]]

[[:Category:Hajun Sung of Suwon-si (KR)|Hajun Sung of Suwon-si (KR)]][[Category:Hajun Sung of Suwon-si (KR)]]

[[:Category:Kiyeon Yang of Suwon-si (KR)|Kiyeon Yang of Suwon-si (KR)]][[Category:Kiyeon Yang of Suwon-si (KR)]]

[[:Category:Changseung Lee of Suwon-si (KR)|Changseung Lee of Suwon-si (KR)]][[Category:Changseung Lee of Suwon-si (KR)]]

[[:Category:Changyup Park of Suwon-si (KR)|Changyup Park of Suwon-si (KR)]][[Category:Changyup Park of Suwon-si (KR)]]

[[:Category:Seung-min Chung of Seoul (KR)|Seung-min Chung of Seoul (KR)]][[Category:Seung-min Chung of Seoul (KR)]]

[[:Category:Sangyoon Lee of Seoul (KR)|Sangyoon Lee of Seoul (KR)]][[Category:Sangyoon Lee of Seoul (KR)]]

[[:Category:Inkyu Sohn of Seoul (KR)|Inkyu Sohn of Seoul (KR)]][[Category:Inkyu Sohn of Seoul (KR)]]

==METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18348846 titled 'METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER

==Simplified Explanation==

The memory element described in the patent application includes a substrate, a first electrode, a phase-change heterolayer, and a second electrode. The phase-change heterolayer consists of one or more confinement material layers and one or more phase-change material layers, with the confinement material layer containing a metal chalcogenide film.

* The memory element consists of a substrate, a first electrode, a phase-change heterolayer, and a second electrode.
* The phase-change heterolayer is made up of confinement material layers and phase-change material layers.
* The confinement material layer includes a metal chalcogenide film.

== Potential Applications ==
* Non-volatile memory devices
* Data storage applications
* Electronic devices requiring memory elements

== Problems Solved ==
* Improved data storage capabilities
* Enhanced performance of memory devices
* Increased reliability of memory elements

== Benefits ==
* Higher data storage density
* Faster data access speeds
* Longer lifespan of memory devices


==Original Abstract Submitted==

A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.



[[Category:H10B63/10]]
[[Category:H10N70/20]]
[[Category:H10N70/00]]
[[Category:H10B63/00]]