18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER
Organization Name
Inventor(s)
Wooyoung Yang of Suwon-si (KR)
Changseung Lee of Suwon-si (KR)
Changyup Park of Suwon-si (KR)
METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18348846 titled 'METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER
Simplified Explanation
The memory element described in the patent application includes a substrate, a first electrode, a phase-change heterolayer, and a second electrode. The phase-change heterolayer consists of one or more confinement material layers and one or more phase-change material layers, with the confinement material layer containing a metal chalcogenide film.
- The memory element consists of a substrate, a first electrode, a phase-change heterolayer, and a second electrode.
- The phase-change heterolayer is made up of confinement material layers and phase-change material layers.
- The confinement material layer includes a metal chalcogenide film.
Potential Applications
- Non-volatile memory devices
- Data storage applications
- Electronic devices requiring memory elements
Problems Solved
- Improved data storage capabilities
- Enhanced performance of memory devices
- Increased reliability of memory elements
Benefits
- Higher data storage density
- Faster data access speeds
- Longer lifespan of memory devices
Original Abstract Submitted
A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.
- SAMSUNG ELECTRONICS CO., LTD.
- Wooyoung Yang of Suwon-si (KR)
- Hyungjun Kim of Seoul (KR)
- Hajun Sung of Suwon-si (KR)
- Kiyeon Yang of Suwon-si (KR)
- Changseung Lee of Suwon-si (KR)
- Changyup Park of Suwon-si (KR)
- Seung-min Chung of Seoul (KR)
- Sangyoon Lee of Seoul (KR)
- Inkyu Sohn of Seoul (KR)
- H10B63/10
- H10N70/20
- H10N70/00
- H10B63/00