View source for 18274808. PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD simplified abstract (Tokyo Electron Limited)

=PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Masaharu Shiratani of Fukuoka (JP)|Masaharu Shiratani of Fukuoka (JP)]][[Category:Masaharu Shiratani of Fukuoka (JP)]]

[[:Category:Kunihiro Kamataki of Fukuoka (JP)|Kunihiro Kamataki of Fukuoka (JP)]][[Category:Kunihiro Kamataki of Fukuoka (JP)]]

[[:Category:Kazunori Koga of Fukuoka (JP)|Kazunori Koga of Fukuoka (JP)]][[Category:Kazunori Koga of Fukuoka (JP)]]

[[:Category:Takahiro Shindo of Nirasaki City, Yamanashi (JP)|Takahiro Shindo of Nirasaki City, Yamanashi (JP)]][[Category:Takahiro Shindo of Nirasaki City, Yamanashi (JP)]]

[[:Category:Tatsuo Matsudo of Nirasaki City, Yamanashi (JP)|Tatsuo Matsudo of Nirasaki City, Yamanashi (JP)]][[Category:Tatsuo Matsudo of Nirasaki City, Yamanashi (JP)]]

==PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18274808 titled 'PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD

==Simplified Explanation==

The patent application describes a plasma processing apparatus for treating a substrate using high-frequency power to generate plasma. The apparatus includes a processing container, an electrode, a high-frequency power supply, and a high-frequency power supply circuit with a matching device to optimize power transfer.

* The apparatus includes a processing container to hold the substrate during plasma processing.
* An electrode is used to apply high-frequency power to generate plasma in the processing container.
* A high-frequency power supply is responsible for providing the necessary power to the electrode.
* The high-frequency power supply circuit includes a matching device to adjust the impedance for efficient power transfer.
* The matching device has a negative impedance portion to match the impedance between the power supply and the plasma.

== Potential Applications ==
This technology can be applied in semiconductor manufacturing, surface treatment of materials, and thin film deposition processes.

== Problems Solved ==
This innovation solves the problem of inefficient power transfer in plasma processing systems, leading to improved processing efficiency and quality.

== Benefits ==
The benefits of this technology include increased processing efficiency, better control over plasma generation, and enhanced substrate treatment capabilities.

== Potential Commercial Applications ==
Potential commercial applications of this technology include plasma etching systems, plasma-enhanced chemical vapor deposition equipment, and plasma cleaning devices.

== Possible Prior Art ==
Prior art in this field may include patents related to impedance matching in plasma processing systems and high-frequency power supply circuits for industrial applications.

=== Unanswered Questions ===

=== How does this technology compare to existing plasma processing systems in terms of efficiency and performance? ===
This article does not provide a direct comparison with existing plasma processing systems to evaluate efficiency and performance.

=== What are the specific technical specifications of the negative impedance portion in the matching device and how does it impact overall system performance? ===
The article does not delve into the technical details of the negative impedance portion in the matching device and its specific impact on system performance.


==Original Abstract Submitted==

There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.



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[[Category:H03H11/44]]