18274808. PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD simplified abstract (Tokyo Electron Limited)

PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD

Organization Name

Tokyo Electron Limited

Inventor(s)

Masaharu Shiratani of Fukuoka (JP)

Kunihiro Kamataki of Fukuoka (JP)

Kazunori Koga of Fukuoka (JP)

Takahiro Shindo of Nirasaki City, Yamanashi (JP)

Tatsuo Matsudo of Nirasaki City, Yamanashi (JP)

PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18274808 titled 'PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD

Simplified Explanation

The patent application describes a plasma processing apparatus for treating a substrate using high-frequency power to generate plasma. The apparatus includes a processing container, an electrode, a high-frequency power supply, and a high-frequency power supply circuit with a matching device to optimize power transfer.

• The apparatus includes a processing container to hold the substrate during plasma processing.
• An electrode is used to apply high-frequency power to generate plasma in the processing container.
• A high-frequency power supply is responsible for providing the necessary power to the electrode.
• The high-frequency power supply circuit includes a matching device to adjust the impedance for efficient power transfer.
• The matching device has a negative impedance portion to match the impedance between the power supply and the plasma.

Potential Applications

This technology can be applied in semiconductor manufacturing, surface treatment of materials, and thin film deposition processes.

Problems Solved

This innovation solves the problem of inefficient power transfer in plasma processing systems, leading to improved processing efficiency and quality.

Benefits

The benefits of this technology include increased processing efficiency, better control over plasma generation, and enhanced substrate treatment capabilities.

Potential Commercial Applications

Potential commercial applications of this technology include plasma etching systems, plasma-enhanced chemical vapor deposition equipment, and plasma cleaning devices.

Possible Prior Art

Prior art in this field may include patents related to impedance matching in plasma processing systems and high-frequency power supply circuits for industrial applications.

How does this technology compare to existing plasma processing systems in terms of efficiency and performance?

This article does not provide a direct comparison with existing plasma processing systems to evaluate efficiency and performance.

What are the specific technical specifications of the negative impedance portion in the matching device and how does it impact overall system performance?

The article does not delve into the technical details of the negative impedance portion in the matching device and its specific impact on system performance.

Original Abstract Submitted

There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.