View source for 18226854. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Kokusai Electric Corporation)

=SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS=


==Organization Name==

[[:Category:Kokusai Electric Corporation|Kokusai Electric Corporation]]


[[Category:Kokusai Electric Corporation]]

==Inventor(s)==

[[:Category:Masahiro Takahashi of Toyama (JP)|Masahiro Takahashi of Toyama (JP)]][[Category:Masahiro Takahashi of Toyama (JP)]]

[[:Category:Hideki Horita of Toyama (JP)|Hideki Horita of Toyama (JP)]][[Category:Hideki Horita of Toyama (JP)]]

[[:Category:Atsushi Moriya of Toyama (JP)|Atsushi Moriya of Toyama (JP)]][[Category:Atsushi Moriya of Toyama (JP)]]

==SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18226854 titled 'SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS

==Simplified Explanation==

The substrate processing method described in the patent application involves forming a film containing a predetermined element on a substrate by performing a series of cycles. Each cycle includes forming a layer containing the predetermined element and a halogen element, and then removing the gas used in the process before forming the next layer.

* The method involves forming a film on a substrate by repeating a series of cycles.
* Each cycle includes forming a layer with the predetermined element and a halogen element, and then removing the gas before forming the next layer.

== Potential Applications ==
This technology could be applied in the semiconductor industry for manufacturing electronic devices, such as integrated circuits and sensors.

== Problems Solved ==
This method provides a precise and controlled way to deposit films on substrates, which is crucial for the production of high-quality electronic devices.

== Benefits ==
The benefits of this technology include improved film quality, increased efficiency in substrate processing, and enhanced performance of electronic devices.

== Potential Commercial Applications ==
"Advanced Substrate Processing Method for Semiconductor Industry"

== Possible Prior Art ==
Prior art in substrate processing methods may include techniques for film deposition using chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes.

== Unanswered Questions ==
=== How does this method compare to traditional film deposition techniques in terms of efficiency and film quality? ===
This article does not provide a direct comparison between this method and traditional techniques like CVD or PVD.

=== Are there any limitations or challenges in implementing this method on an industrial scale? ===
The article does not address any potential limitations or challenges that may arise when scaling up this substrate processing method for commercial production.


==Original Abstract Submitted==

According to one aspect of the present disclosure, there is provided a substrate processing method including: forming a film containing a predetermined element on a substrate by performing a first cycle a first predetermined number of times, the first cycle including: forming a first layer containing the predetermined element by performing a second cycle a second predetermined number of times, wherein a surface of the first layer is halogen-terminated and wherein the second cycle includes: supplying a first gas containing the predetermined element and a halogen element to the substrate; and removing the first gas; and forming a second layer containing the predetermined element by supplying a second gas containing the predetermined element to the substrate.



[[Category:C23C16/52]]
[[Category:C23C16/44]]
[[Category:H01L21/02]]
[[Category:H01L21/67]]