View source for 18098330. WAFER CLEANING APPARATUS, METHOD FOR CLEANING WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=WAFER CLEANING APPARATUS, METHOD FOR CLEANING WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:SeongKeun Cho of Suwon-si (KR)|SeongKeun Cho of Suwon-si (KR)]][[Category:SeongKeun Cho of Suwon-si (KR)]]

[[:Category:Young Hoo Kim of Yongin-si (KR)|Young Hoo Kim of Yongin-si (KR)]][[Category:Young Hoo Kim of Yongin-si (KR)]]

[[:Category:Seung Min Shin of Suwon-si (KR)|Seung Min Shin of Suwon-si (KR)]][[Category:Seung Min Shin of Suwon-si (KR)]]

[[:Category:Tae Min Earmme of Hwaseong-si (KR)|Tae Min Earmme of Hwaseong-si (KR)]][[Category:Tae Min Earmme of Hwaseong-si (KR)]]

[[:Category:Kun Tack Lee of Suwon-si (KR)|Kun Tack Lee of Suwon-si (KR)]][[Category:Kun Tack Lee of Suwon-si (KR)]]

[[:Category:Hun Jae Jang of Suwon-si (KR)|Hun Jae Jang of Suwon-si (KR)]][[Category:Hun Jae Jang of Suwon-si (KR)]]

[[:Category:Eun Hee Jeang of Paju-si (KR)|Eun Hee Jeang of Paju-si (KR)]][[Category:Eun Hee Jeang of Paju-si (KR)]]

==WAFER CLEANING APPARATUS, METHOD FOR CLEANING WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18098330 titled 'WAFER CLEANING APPARATUS, METHOD FOR CLEANING WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The patent application describes a wafer cleaning apparatus and methods for cleaning wafers and fabricating semiconductor devices. The method involves using a laser to heat the wafer while supplying a chemical to clean its surface. The laser passes through an optical system with an aspheric lens array and a calibration window with different light transmissivities.

* The patent application describes a wafer cleaning apparatus and methods for cleaning wafers and fabricating semiconductor devices.
* The method involves using a laser to heat the wafer while supplying a chemical to clean its surface.
* The laser passes through an optical system with an aspheric lens array.
* The laser also passes through a calibration window with different light transmissivities.
* The calibration window has a first light projection window with two different regions.
* The first region is covered with a first coating layer, while the second region is covered with a second coating layer.
* The first and second coating layers have different light transmissivities.

==Potential Applications==
* Semiconductor manufacturing industry
* Wafer cleaning processes

==Problems Solved==
* Efficient and effective cleaning of wafers
* Precise control of laser heating and chemical cleaning processes
* Calibration of optical system for accurate laser penetration

==Benefits==
* Improved wafer cleaning results
* Enhanced control and accuracy in the fabrication of semiconductor devices
* Efficient calibration of the optical system for consistent laser penetration.


==Original Abstract Submitted==

A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.



[[Category:H01L21/02]]
[[Category:B08B3/08]]
[[Category:H01L21/428]]
[[Category:H01L21/687]]