View source for 18051034. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:KEUN HWI Cho of Seoul (KR)|KEUN HWI Cho of Seoul (KR)]][[Category:KEUN HWI Cho of Seoul (KR)]]

[[:Category:Soonmoon Jung of Seongnam-si (KR)|Soonmoon Jung of Seongnam-si (KR)]][[Category:Soonmoon Jung of Seongnam-si (KR)]]

[[:Category:Dongwon Kim of Seongnam-si (KR)|Dongwon Kim of Seongnam-si (KR)]][[Category:Dongwon Kim of Seongnam-si (KR)]]

[[:Category:Myung Gil Kang of Suwon-si (KR)|Myung Gil Kang of Suwon-si (KR)]][[Category:Myung Gil Kang of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18051034 titled 'SEMICONDUCTOR DEVICES

==Simplified Explanation==

The patent application describes semiconductor devices and methods of forming them. Here are the key points:

* The semiconductor devices consist of a substrate with two regions separated by a device isolation layer.
* On each region, there is a gate electrode, and these electrodes are aligned to each other in a specific direction.
* An insulating separation pattern is present between the gate electrodes, extending in a different direction.
* A connection structure electrically connects the two gate electrodes, and a signal line is connected to this structure.
* The signal line extends in a direction perpendicular to the insulating separation pattern and overlaps it vertically.

Potential applications of this technology:

* Integrated circuits: The semiconductor devices can be used in the production of integrated circuits for various electronic devices.
* Memory devices: The technology can be applied to create memory devices with improved performance and efficiency.
* Microprocessors: The semiconductor devices can be utilized in the manufacturing of microprocessors for faster and more efficient data processing.

Problems solved by this technology:

* Improved device isolation: The device isolation layer helps prevent interference between different regions on the substrate, enhancing the overall performance and reliability of the semiconductor devices.
* Efficient signal transmission: The connection structure and signal line enable effective electrical connection and transmission between the gate electrodes, improving the functionality of the devices.
* Space optimization: The alignment and overlapping of components allow for compact designs, maximizing the use of available space on the substrate.

Benefits of this technology:

* Enhanced performance: The improved device isolation and efficient signal transmission contribute to the overall performance and functionality of the semiconductor devices.
* Space-saving design: The compact layout of components enables the creation of smaller and more efficient devices.
* Cost-effectiveness: The methods of forming the semiconductor devices described in the patent application may offer cost advantages in manufacturing processes.


==Original Abstract Submitted==

Semiconductor devices and methods of forming the same are disclosed. The semiconductor devices may include a substrate including a first region and a second region, which are spaced apart from each other with a device isolation layer interposed therebetween, a first gate electrode and a second gate electrode on the first and second regions, respectively, an insulating separation pattern separating the first gate electrode and the second gate electrode from each other and extending in a second direction that traverses the first direction, a connection structure electrically connecting the first gate electrode to the second gate electrode, and a first signal line electrically connected to the connection structure. The first and second gate electrodes are extended in a first direction and are aligned to each other in the first direction. The first signal line may extend in the second direction and may vertically overlap the insulating separation pattern.



[[Category:H01L29/423]]
[[Category:H01L27/092]]
[[Category:H01L29/417]]
[[Category:H01L23/528]]