View source for 17935161. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (Changxin Memory Technologies, Inc.)

=METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE=


==Organization Name==

[[:Category:Changxin Memory Technologies, Inc.|Changxin Memory Technologies, Inc.]]


[[Category:Changxin Memory Technologies, Inc.]]

==Inventor(s)==

[[:Category:Zhaopei Cui of Hefei City (CN)|Zhaopei Cui of Hefei City (CN)]][[Category:Zhaopei Cui of Hefei City (CN)]]

[[:Category:Ying Song of Hefei City (CN)|Ying Song of Hefei City (CN)]][[Category:Ying Song of Hefei City (CN)]]

==METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17935161 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

==Simplified Explanation==

The patent application describes a method of manufacturing a semiconductor structure and the resulting structure itself. Here is a simplified explanation of the abstract:

* The method starts by providing a substrate.
* A multilayer film stack is then formed on the substrate.
* A supporter is formed at the top of the multilayer film stack.
* The multilayer film stack is etched to create multiple gate structures arranged at intervals along a first direction.
* The supporter extends through the top of each gate structure and continues along the first direction.

Potential Applications:

* This method can be used in the manufacturing of various semiconductor devices, such as transistors or integrated circuits.
* It can be applied in the production of advanced electronic devices, including smartphones, computers, and other consumer electronics.

Problems Solved:

* The method provides a way to create gate structures with precise arrangement and intervals, which is crucial for the proper functioning of semiconductor devices.
* The supporter helps in maintaining the structural integrity of the gate structures during the etching process.

Benefits:

* The method allows for the efficient manufacturing of semiconductor structures with accurate gate structure arrangement.
* The resulting semiconductor structure has improved stability and reliability due to the presence of the supporter.
* This innovation can contribute to the development of more advanced and high-performance electronic devices.


==Original Abstract Submitted==

A method of manufacturing a semiconductor structure and a semiconductor structure are disclosed. The method of manufacturing a semiconductor structure includes: providing a substrate; forming a multilayer film stack on the substrate; forming a supporter at a top of the multilayer film stack; and etching the multilayer film stack to form a plurality of gate structures arranged at intervals along a first direction, where the supporter penetrates a top of each of the plurality of gate structures and extends along the first direction.



[[Category:H01L21/768]]
[[Category:H01L21/8234]]
[[Category:H01L21/3213]]