View source for 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Sungmin Kim of Incheon (KR)|Sungmin Kim of Incheon (KR)]][[Category:Sungmin Kim of Incheon (KR)]]

==SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17887600 titled 'SEMICONDUCTOR DEVICES

==Simplified Explanation==

The patent application describes a semiconductor device that includes a buried interconnection line, a gate electrode, and channel layers. The buried interconnection line is made up of a metal layer and a semiconductor layer stacked in a vertical direction. The gate electrode intersects the buried interconnection line, and the channel layers are surrounded by the gate electrode. The device also includes a buried insulating layer between the channel layers and the buried interconnection line, and source/drain regions on both sides of the gate electrode. The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer. The device further includes a contact plug on the first source/drain region and a via below the buried interconnection line.

* The device includes a buried interconnection line made up of a metal layer and a semiconductor layer stacked in a vertical direction.
* The gate electrode intersects the buried interconnection line, and the channel layers are surrounded by the gate electrode.
* The buried insulating layer separates the channel layers from the buried interconnection line.
* The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer.
* The device includes a contact plug on the first source/drain region and a via below the buried interconnection line.

==Potential Applications==
* This technology can be used in the manufacturing of semiconductor devices such as integrated circuits.
* It can be applied in various electronic devices, including smartphones, computers, and other consumer electronics.

==Problems Solved==
* The buried interconnection line allows for efficient routing of electrical signals in the semiconductor device.
* The buried insulating layer helps to isolate the channel layers from the buried interconnection line, reducing interference and improving device performance.

==Benefits==
* The stacked structure of the buried interconnection line provides improved conductivity and signal transmission.
* The contact plug and via enable reliable electrical connections between different components of the semiconductor device.
* The design of the device allows for compact and efficient integration of multiple components, leading to smaller and more powerful electronic devices.


==Original Abstract Submitted==

A semiconductor device includes a buried interconnection line extending in a first direction, a gate electrode extending in a second direction intersecting the buried interconnection line, and channel layers spaced apart from each other in a third direction perpendicular to the first direction and the second direction. The channel layers are surrounded by the gate electrode, and the buried interconnection line includes a metal layer and a semiconductor layer stacked in the third direction. The device includes a buried insulating layer between the channel layers and the buried interconnection line, and first and second source/drain regions in contact with the channel layers on both sides of the gate electrode. The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer. The device includes a contact plug on the first source/drain region, and a via below the buried interconnection line.



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