17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Sungmin Kim of Incheon (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17887600 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that includes a buried interconnection line, a gate electrode, and channel layers. The buried interconnection line is made up of a metal layer and a semiconductor layer stacked in a vertical direction. The gate electrode intersects the buried interconnection line, and the channel layers are surrounded by the gate electrode. The device also includes a buried insulating layer between the channel layers and the buried interconnection line, and source/drain regions on both sides of the gate electrode. The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer. The device further includes a contact plug on the first source/drain region and a via below the buried interconnection line.

• The device includes a buried interconnection line made up of a metal layer and a semiconductor layer stacked in a vertical direction.
• The gate electrode intersects the buried interconnection line, and the channel layers are surrounded by the gate electrode.
• The buried insulating layer separates the channel layers from the buried interconnection line.
• The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer.
• The device includes a contact plug on the first source/drain region and a via below the buried interconnection line.

Potential Applications

• This technology can be used in the manufacturing of semiconductor devices such as integrated circuits.
• It can be applied in various electronic devices, including smartphones, computers, and other consumer electronics.

Problems Solved

• The buried interconnection line allows for efficient routing of electrical signals in the semiconductor device.
• The buried insulating layer helps to isolate the channel layers from the buried interconnection line, reducing interference and improving device performance.

Benefits

• The stacked structure of the buried interconnection line provides improved conductivity and signal transmission.
• The contact plug and via enable reliable electrical connections between different components of the semiconductor device.
• The design of the device allows for compact and efficient integration of multiple components, leading to smaller and more powerful electronic devices.

Original Abstract Submitted

A semiconductor device includes a buried interconnection line extending in a first direction, a gate electrode extending in a second direction intersecting the buried interconnection line, and channel layers spaced apart from each other in a third direction perpendicular to the first direction and the second direction. The channel layers are surrounded by the gate electrode, and the buried interconnection line includes a metal layer and a semiconductor layer stacked in the third direction. The device includes a buried insulating layer between the channel layers and the buried interconnection line, and first and second source/drain regions in contact with the channel layers on both sides of the gate electrode. The second source/drain region penetrates through the buried insulating layer and is in contact with the semiconductor layer. The device includes a contact plug on the first source/drain region, and a via below the buried interconnection line.