View source for 17849100. ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE simplified abstract (MICRON TECHNOLOGY, INC.)

=ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE=


==Organization Name==

[[:Category:MICRON TECHNOLOGY, INC.|MICRON TECHNOLOGY, INC.]]


[[Category:MICRON TECHNOLOGY, INC.]]

==Inventor(s)==

[[:Category:John E. Riley of McKinney TX (US)|John E. Riley of McKinney TX (US)]][[Category:John E. Riley of McKinney TX (US)]]

[[:Category:Joo-Sang Lee of Frisco TX (US)|Joo-Sang Lee of Frisco TX (US)]][[Category:Joo-Sang Lee of Frisco TX (US)]]

[[:Category:Scott E. Smith of Plano TX (US)|Scott E. Smith of Plano TX (US)]][[Category:Scott E. Smith of Plano TX (US)]]

==ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17849100 titled 'ADJUSTING REFRESH RATE DURING SELF-REFRESH STATE

==Simplified Explanation==

The patent application describes methods, systems, and devices for adjusting the refresh rate of a memory system during a self-refresh state. 

* The memory system enters a self-refresh state and performs a first set of refresh operations on a set of memory cells at a certain rate.
* The memory system determines if a counter associated with the refresh operations satisfies a threshold for a second time while in the self-refresh state.
* If the counter satisfies the threshold for the second time, a flip-flop circuit modifies its output.
* The memory system then decreases the rate of executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.

Potential applications of this technology:

* Memory systems in electronic devices such as smartphones, tablets, and computers.
* Embedded systems and microcontrollers that utilize memory for data storage.

Problems solved by this technology:

* Efficient management of memory refresh operations during a self-refresh state.
* Reducing power consumption by adjusting the refresh rate based on specific conditions.

Benefits of this technology:

* Improved power efficiency by dynamically adjusting the refresh rate.
* Enhanced performance and reliability of memory systems.
* Extended battery life for portable electronic devices.


==Original Abstract Submitted==

Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, that a counter associated with the set of refresh operations satisfies a threshold for a second time while the memory system is in the self-refresh state. In response to the counter satisfying the threshold for the second time, a flip-flop circuit at the memory system may modify an output of the flip-flop circuit and the memory system may decrease the rate for executing the refresh operations to a second rate based on the modified output of the flip-flop circuit.



[[Category:G11C11/406]]
[[Category:G11C11/4074]]