View source for 17835854. HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS simplified abstract (Intel Corporation)

=HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Thomas Sounart of Chandler AZ (US)|Thomas Sounart of Chandler AZ (US)]][[Category:Thomas Sounart of Chandler AZ (US)]]

[[:Category:Kaan Oguz of Portland OR (US)|Kaan Oguz of Portland OR (US)]][[Category:Kaan Oguz of Portland OR (US)]]

[[:Category:Neelam Prabhu Gaunkar of Chandler AZ (US)|Neelam Prabhu Gaunkar of Chandler AZ (US)]][[Category:Neelam Prabhu Gaunkar of Chandler AZ (US)]]

[[:Category:Tristan Tronic of Aloha OR (US)|Tristan Tronic of Aloha OR (US)]][[Category:Tristan Tronic of Aloha OR (US)]]

==HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17835854 titled 'HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS

==Simplified Explanation==

The patent application describes capacitors used for various purposes in electronic systems, such as decoupling and power delivery in integrated circuits. The capacitors consist of a transition metal oxide dielectric sandwiched between two electrodes. One of the electrodes includes a conductive metal oxide layer on the transition metal oxide dielectric, and a high density metal layer on top of the conductive metal oxide.

* The patent application discloses capacitors for decoupling, power delivery, integrated circuits, and related systems.
* The capacitors utilize a transition metal oxide dielectric between two electrodes.
* One of the electrodes includes a conductive metal oxide layer on top of the transition metal oxide dielectric.
* A high density metal layer is added on top of the conductive metal oxide layer.
* The invention provides improved performance and reliability for capacitors used in electronic systems.

== Potential Applications ==
The technology described in the patent application has potential applications in various electronic systems and devices, including:

* Integrated circuits
* Power delivery systems
* Decoupling capacitors
* Electronic devices requiring high-performance capacitors

== Problems Solved ==
The technology addresses several problems associated with capacitors used in electronic systems, including:

* Inefficient power delivery and decoupling in integrated circuits
* Limited performance and reliability of capacitors
* Challenges in fabricating high-density capacitors

== Benefits ==
The technology offers several benefits for electronic systems and devices:

* Improved power delivery and decoupling performance in integrated circuits
* Enhanced reliability and durability of capacitors
* Simplified fabrication process for high-density capacitors


==Original Abstract Submitted==

Capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such capacitors include a transition metal oxide dielectric between two electrodes, at least one of which includes a conductive metal oxide layer on the transition metal oxide dielectric and a high density metal layer on the conductive metal oxide.



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