View source for 17812233. MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTORS AND CAPACITORS simplified abstract (Micron Technology, Inc.)

=MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTORS AND CAPACITORS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Marcello Mariani of Milano (IT)|Marcello Mariani of Milano (IT)]][[Category:Marcello Mariani of Milano (IT)]]

[[:Category:Giorgio Servalli of Fara Gera d'Adda (IT)|Giorgio Servalli of Fara Gera d'Adda (IT)]][[Category:Giorgio Servalli of Fara Gera d'Adda (IT)]]

==MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTORS AND CAPACITORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17812233 titled 'MEMORY DEVICE ASSEMBLY WITH REDISTRIBUTION LAYER BETWEEN TRANSISTORS AND CAPACITORS

==Simplified Explanation==

The patent application describes a memory device with an array of memory cells. Each memory cell consists of a transistor and a capacitor. The transistor has a pillar structure with upper and lower source/drain regions and a channel in between. The transistor also has a gate that is part of a gate line and is located near the channel. The memory cell includes a capacitor with a bottom electrode, an insulator, and a top electrode. The memory cell also includes a conductive contact region that connects the transistor and the capacitor.

* The memory device includes an array of memory cells.
* Each memory cell consists of a transistor and a capacitor.
* The transistor has a pillar structure with upper and lower source/drain regions and a channel.
* The transistor's gate is part of a gate line and is located near the channel.
* The memory cell includes a capacitor with a bottom electrode, an insulator, and a top electrode.
* The memory cell also includes a conductive contact region that connects the transistor and the capacitor.
* The conductive contact region includes the upper source/drain, a first conductive region, and a second conductive region.
* The first conductive region abuts the upper source/drain and contacts a first insulator line.
* The second conductive region abuts the upper source/drain and contacts a second insulator line parallel to the first insulator line.

== Potential Applications ==
* Memory devices for computers, smartphones, and other electronic devices.
* Storage devices for data centers and cloud computing.
* Embedded memory in various electronic systems.

== Problems Solved ==
* Provides a compact and efficient memory cell design.
* Enables high-density memory arrays.
* Improves the performance and reliability of memory devices.

== Benefits ==
* Increased memory capacity in a smaller footprint.
* Faster data access and retrieval.
* Enhanced overall performance of electronic devices.
* Improved energy efficiency.


==Original Abstract Submitted==

A memory device includes an array of memory cells. A memory cell includes a transistor with a pillar that includes an upper source/drain, a lower source/drain, and a channel between the upper source/drain and the lower source/drain. The transistor includes a gate that is part of a gate line and that is proximate to the channel. The memory cell includes a capacitor having a bottom electrode, an insulator, and a top electrode. The memory cell includes a conductive contact region that couples the transistor and the capacitor and that includes the upper source/drain, a first conductive region having a right surface that abuts the upper source/drain and having a left surface that contacts a first insulator line, and a second conductive region having a left surface that abuts the upper source/drain and having a right surface that contacts a second insulator line that is parallel to the first insulator line.



[[Category:H01L27/11507]]