View source for 17677329. METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:MING He of San Jose CA (US)|MING He of San Jose CA (US)]][[Category:MING He of San Jose CA (US)]]

[[:Category:Jaehyun Park of Hwaseong-si (KR)|Jaehyun Park of Hwaseong-si (KR)]][[Category:Jaehyun Park of Hwaseong-si (KR)]]

[[:Category:Mehdi Saremi of Danville CA (US)|Mehdi Saremi of Danville CA (US)]][[Category:Mehdi Saremi of Danville CA (US)]]

[[:Category:Rebecca Park of Mountain View CA (US)|Rebecca Park of Mountain View CA (US)]][[Category:Rebecca Park of Mountain View CA (US)]]

[[:Category:Harsono Simka of Saratoga CA (US)|Harsono Simka of Saratoga CA (US)]][[Category:Harsono Simka of Saratoga CA (US)]]

[[:Category:Daewon Ha of Hwaseong-si (KR)|Daewon Ha of Hwaseong-si (KR)]][[Category:Daewon Ha of Hwaseong-si (KR)]]

==METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17677329 titled 'METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME

==Simplified Explanation==

The patent application describes a method for forming an integrated circuit device using a preliminary transistor stack on a substrate. The method involves several steps, including the formation of sacrificial layers, active regions, and source/drain regions, as well as the conversion of a preliminary capping layer into an insulating material.

* The method involves providing a preliminary transistor stack on a substrate.
* The preliminary transistor stack includes sacrificial layers, active regions, and source/drain regions.
* Lower source/drain regions are formed on the lower active region.
* A preliminary capping layer, made of a semiconductor material, is formed on one of the lower source/drain regions.
* The preliminary capping layer is converted into a capping layer made of an insulating material.
* Upper source/drain regions are formed on the upper active region.

Potential applications of this technology:

* Integrated circuit manufacturing
* Semiconductor device fabrication

Problems solved by this technology:

* Provides a method for forming an integrated circuit device with improved performance and reliability.
* Allows for the formation of source/drain regions and capping layers in a more efficient and precise manner.

Benefits of this technology:

* Improved performance and reliability of integrated circuit devices.
* Enhanced efficiency and precision in the formation of source/drain regions and capping layers.


==Original Abstract Submitted==

Integrated circuit devices and methods of forming the integrated circuit device are provided. The methods may include providing a preliminary transistor stack including an upper sacrificial layer on a substrate, an upper active region between the substrate and the upper sacrificial layer, a lower sacrificial layer between the substrate and the upper active region, and a lower active region between the substrate and the lower sacrificial layer. The methods may further include forming lower source/drain regions on respective opposing side surfaces of the lower active region, forming a preliminary capping layer on a first lower source/drain region of the lower source/drain regions, the preliminary capping layer including a semiconductor material, converting the preliminary capping layer to a capping layer that includes an insulating material, and forming upper source/drain regions on respective opposing side surfaces of the upper active region.



[[Category:H01L21/8238]]
[[Category:H01L27/092]]