View source for 17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Julien Frougier of Albany NY (US)|Julien Frougier of Albany NY (US)]][[Category:Julien Frougier of Albany NY (US)]]

[[:Category:Andrew M. Greene of Slingerlands NY (US)|Andrew M. Greene of Slingerlands NY (US)]][[Category:Andrew M. Greene of Slingerlands NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Kangguo Cheng of Schenectady NY (US)|Kangguo Cheng of Schenectady NY (US)]][[Category:Kangguo Cheng of Schenectady NY (US)]]

[[:Category:Veeraraghavan S. Basker of Schenectady NY (US)|Veeraraghavan S. Basker of Schenectady NY (US)]][[Category:Veeraraghavan S. Basker of Schenectady NY (US)]]

==GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17550658 titled 'GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER

==Simplified Explanation==

The abstract describes a gate-all-around field effect transistor device, which includes channel layers, inner spacers, and an inner spacer liner. 

* The gate-all-around field effect transistor device has one or more channel layers on a substrate.
* An inner spacer is wrapped around four sides of the end portion of each channel layer.
* A portion of an inner spacer liner is present between the uppermost channel layer and the outer spacer.

Potential applications of this technology:

* Integrated circuits
* High-performance computing
* Mobile devices
* Internet of Things (IoT) devices

Problems solved by this technology:

* Improved transistor performance
* Enhanced control over the flow of electrical current
* Reduction in power consumption
* Increased speed and efficiency of electronic devices

Benefits of this technology:

* Higher transistor density
* Improved device performance and functionality
* Lower power consumption
* Faster and more efficient electronic devices


==Original Abstract Submitted==

A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.



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