View source for 17547093. METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION simplified abstract (QUALCOMM Incorporated)

=METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION=


==Organization Name==

[[:Category:QUALCOMM Incorporated|QUALCOMM Incorporated]]


[[Category:QUALCOMM Incorporated]]

==Inventor(s)==

[[:Category:Nosun Park of Incheon (KR)|Nosun Park of Incheon (KR)]][[Category:Nosun Park of Incheon (KR)]]

[[:Category:Changhan Hobie Yun of San Diego CA (US)|Changhan Hobie Yun of San Diego CA (US)]][[Category:Changhan Hobie Yun of San Diego CA (US)]]

[[:Category:Daniel Daeik Kim of San Diego CA (US)|Daniel Daeik Kim of San Diego CA (US)]][[Category:Daniel Daeik Kim of San Diego CA (US)]]

[[:Category:Paragkumar Ajaybhai Thadesar of San Diego CA (US)|Paragkumar Ajaybhai Thadesar of San Diego CA (US)]][[Category:Paragkumar Ajaybhai Thadesar of San Diego CA (US)]]

[[:Category:Sameer Sunil Vadhavkar of San Diego CA (US)|Sameer Sunil Vadhavkar of San Diego CA (US)]][[Category:Sameer Sunil Vadhavkar of San Diego CA (US)]]

==METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17547093 titled 'METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION

==Simplified Explanation==

The abstract describes an integrated circuit (IC) that includes a first metal-insulator-metal (MIM) capacitor and an inductor. The MIM capacitor has a first plate made of a metallization layer on the substrate, a MIM insulator layer on the first plate and the substrate, and a second plate made of a second metallization layer on the MIM insulator layer and the substrate. The inductor is formed by a portion of the second plate on the substrate.

* The IC includes a MIM capacitor with a first plate made of a metallization layer on the substrate.
* The MIM capacitor also has a MIM insulator layer on the first plate and the substrate.
* The MIM capacitor includes a second plate made of a second metallization layer on the MIM insulator layer and the substrate.
* The IC also includes an inductor formed by a portion of the second plate on the substrate.

==Potential Applications==
* This technology can be used in various electronic devices that require integrated circuits, such as smartphones, computers, and IoT devices.
* It can be applied in communication systems, power management circuits, and signal processing circuits.

==Problems Solved==
* The integration of a MIM capacitor and an inductor in a single IC allows for more compact and efficient circuit designs.
* This technology solves the problem of limited space on a substrate by combining multiple components into a single structure.

==Benefits==
* The integration of a MIM capacitor and an inductor reduces the overall size and complexity of the circuit.
* It improves the performance and efficiency of the integrated circuit.
* The compact design enables the IC to be used in smaller electronic devices without sacrificing functionality.


==Original Abstract Submitted==

An integrated circuit (IC) includes a substrate and a first metal-insulator-metal (MIM) capacitor. The first MIM capacitor includes a first plate comprising a first metallization layer on a surface of the substrate. The first MIM capacitor also includes a first MIM insulator layer on a first portion of a surface of the first plate, a sidewall of the first plate, and a first portion of the surface of the substrate. The first MIM capacitor further includes a second plate on the first MIM insulator layer and on a second portion of the surface of the substrate, the second plate comprising a second metallization layer. The IC also includes an inductor comprising a portion of the second plate on the second portion of the surface of the substrate.



[[Category:H01L23/522]]
[[Category:H01L49/02]]