17547093. METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION simplified abstract (QUALCOMM Incorporated)
Contents
- 1 METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION
Organization Name
Inventor(s)
Changhan Hobie Yun of San Diego CA (US)
Daniel Daeik Kim of San Diego CA (US)
Paragkumar Ajaybhai Thadesar of San Diego CA (US)
Sameer Sunil Vadhavkar of San Diego CA (US)
METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17547093 titled 'METAL-INSULATOR-METAL (MIM) CAPACITOR STRUCTURE FOR LAYER COUNT REDUCTION AND LOWER CAPACITANCE VARIATION
Simplified Explanation
The abstract describes an integrated circuit (IC) that includes a first metal-insulator-metal (MIM) capacitor and an inductor. The MIM capacitor has a first plate made of a metallization layer on the substrate, a MIM insulator layer on the first plate and the substrate, and a second plate made of a second metallization layer on the MIM insulator layer and the substrate. The inductor is formed by a portion of the second plate on the substrate.
- The IC includes a MIM capacitor with a first plate made of a metallization layer on the substrate.
- The MIM capacitor also has a MIM insulator layer on the first plate and the substrate.
- The MIM capacitor includes a second plate made of a second metallization layer on the MIM insulator layer and the substrate.
- The IC also includes an inductor formed by a portion of the second plate on the substrate.
Potential Applications
- This technology can be used in various electronic devices that require integrated circuits, such as smartphones, computers, and IoT devices.
- It can be applied in communication systems, power management circuits, and signal processing circuits.
Problems Solved
- The integration of a MIM capacitor and an inductor in a single IC allows for more compact and efficient circuit designs.
- This technology solves the problem of limited space on a substrate by combining multiple components into a single structure.
Benefits
- The integration of a MIM capacitor and an inductor reduces the overall size and complexity of the circuit.
- It improves the performance and efficiency of the integrated circuit.
- The compact design enables the IC to be used in smaller electronic devices without sacrificing functionality.
Original Abstract Submitted
An integrated circuit (IC) includes a substrate and a first metal-insulator-metal (MIM) capacitor. The first MIM capacitor includes a first plate comprising a first metallization layer on a surface of the substrate. The first MIM capacitor also includes a first MIM insulator layer on a first portion of a surface of the first plate, a sidewall of the first plate, and a first portion of the surface of the substrate. The first MIM capacitor further includes a second plate on the first MIM insulator layer and on a second portion of the surface of the substrate, the second plate comprising a second metallization layer. The IC also includes an inductor comprising a portion of the second plate on the second portion of the surface of the substrate.
