View source for 17542485. HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Cezar Bogdan Zota of Rueschlikon (CH)|Cezar Bogdan Zota of Rueschlikon (CH)]][[Category:Cezar Bogdan Zota of Rueschlikon (CH)]]

[[:Category:Thomas Morf of Ruschlikon (CH)|Thomas Morf of Ruschlikon (CH)]][[Category:Thomas Morf of Ruschlikon (CH)]]

[[:Category:Eunjung Cha of Adliswill (CH)|Eunjung Cha of Adliswill (CH)]][[Category:Eunjung Cha of Adliswill (CH)]]

[[:Category:Peter Mueller of Zurich (CH)|Peter Mueller of Zurich (CH)]][[Category:Peter Mueller of Zurich (CH)]]

==HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17542485 titled 'HIGH ELECTRON MOBILITY TRANSISTOR WITH SOURCE AND DRAIN ELECTRODES BELOW THE CHANNEL

==Simplified Explanation==

The abstract describes a superconductor transistor structure that includes a source electrode and a drain electrode on the same plane. A channel region is present on top of the source and drain electrodes to carry a current. A gate structure made of a metallic material is placed on top of the channel region. The source and drain are positioned on the opposite side of the gate structure with respect to the channel region.

* The superconductor transistor structure includes a source electrode, drain electrode, and channel region.
* The source and drain electrodes are on the same plane.
* The channel region is designed to carry a current.
* A gate structure made of a metallic material is placed on top of the channel region.
* The source and drain electrodes are located on the side opposite to the gate structure.

==Potential Applications==
* High-speed computing: The superconductor transistor structure can be used in high-speed computing applications, where fast and efficient data processing is required.
* Quantum computing: The unique properties of superconductors make them suitable for quantum computing applications, and this transistor structure can contribute to the development of quantum computers.
* Energy-efficient electronics: Superconductor transistors have the potential to significantly reduce power consumption in electronic devices, leading to more energy-efficient electronics.

==Problems Solved==
* Heat dissipation: Superconductor transistors have the advantage of low heat generation, solving the problem of excessive heat dissipation in traditional transistors.
* Power consumption: By utilizing superconducting materials, this transistor structure can address the issue of high power consumption in electronic devices.
* Speed limitations: The use of superconductors can overcome the speed limitations of conventional transistors, enabling faster data processing.

==Benefits==
* Faster data processing: The superconductor transistor structure allows for faster data processing due to the unique properties of superconducting materials.
* Energy efficiency: By reducing power consumption, this technology contributes to energy-efficient electronics and helps in conserving energy resources.
* Improved performance: The use of superconductors in transistors enhances overall device performance, leading to improved efficiency and reliability.


==Original Abstract Submitted==

A superconductor transistor structure includes a source electrode and a drain electrode on a same plane as the source electrode. There is a channel region on top of the source and drain electrodes and configured to carry a current. A gate structure comprising a metallic material is on top of the channel region. The source and drain are located on a side that is opposite to that of the gate structure, with respect to the channel region.



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