View source for 17531149. REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL simplified abstract (International Business Machines Corporation)

=REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Kangguo Cheng of Schenectady NY (US)|Kangguo Cheng of Schenectady NY (US)]][[Category:Kangguo Cheng of Schenectady NY (US)]]

[[:Category:JUNTAO Li of Cohoes NY (US)|JUNTAO Li of Cohoes NY (US)]][[Category:JUNTAO Li of Cohoes NY (US)]]

[[:Category:ZUOGUANG Liu of Schenectady NY (US)|ZUOGUANG Liu of Schenectady NY (US)]][[Category:ZUOGUANG Liu of Schenectady NY (US)]]

[[:Category:Arthur Gasasira of HALFMOON NY (US)|Arthur Gasasira of HALFMOON NY (US)]][[Category:Arthur Gasasira of HALFMOON NY (US)]]

==REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17531149 titled 'REDUCING CONTACT RESISTANCE OF PHASE CHANGE MEMORY BRIDGE CELL

==Simplified Explanation==

The abstract of the patent application describes a phase change memory technology that includes a substrate, first phase change elements, electrodes, and a second phase change element.

* The technology involves a substrate, which serves as the base for the memory device.
* The memory device consists of multiple first phase change elements that are placed on the substrate.
* Electrodes are also present on the first phase change elements, providing a means for electrical connections.
* A second phase change element is included in the design, connecting the electrodes and positioned between the first phase change elements.

== Potential Applications ==
This phase change memory technology has potential applications in various fields, including:

* Data storage: The memory device can be used in storage devices like solid-state drives (SSDs) or non-volatile memory modules.
* Computing: It can be utilized in computer systems for faster and more efficient data processing.
* Internet of Things (IoT): The memory technology can be integrated into IoT devices to enhance their performance and storage capabilities.

== Problems Solved ==
The phase change memory technology addresses several problems in the field of data storage and computing, such as:

* Limited storage capacity: By utilizing phase change elements, the memory device can provide higher storage capacity compared to traditional memory technologies.
* Slow data access: The technology enables faster data access and retrieval, improving overall system performance.
* Data retention: The phase change memory offers non-volatile storage, ensuring data retention even during power loss or system shutdown.

== Benefits ==
The phase change memory technology offers several benefits, including:

* High storage density: The design allows for a greater number of memory elements to be packed into a smaller space, increasing storage density.
* Fast data access: The memory device provides quick read and write speeds, reducing data access latency.
* Non-volatile storage: The phase change memory retains data even without power, ensuring data integrity and reliability.


==Original Abstract Submitted==

A phase change memory includes a substrate, a plurality of first phase change elements on the substrate, a plurality of electrodes on the plurality of first phase change elements, and a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements.



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