View source for 17525511. METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY simplified abstract (CANON KABUSHIKI KAISHA)

=METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY=


==Organization Name==

[[:Category:CANON KABUSHIKI KAISHA|CANON KABUSHIKI KAISHA]]


[[Category:CANON KABUSHIKI KAISHA]]

==Inventor(s)==

[[:Category:Nilabh K. Roy of Austin TX (US)|Nilabh K. Roy of Austin TX (US)]][[Category:Nilabh K. Roy of Austin TX (US)]]

[[:Category:Mario Johannes Meissl of Austin TX (US)|Mario Johannes Meissl of Austin TX (US)]][[Category:Mario Johannes Meissl of Austin TX (US)]]

==METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17525511 titled 'METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY

==Simplified Explanation==

The patent application describes a method for correcting the final imprint force in an imprint process. Here are the key points:

* The method involves obtaining position traces of an imprint head as it moves along a predetermined trajectory.
* A force disturbance model is created based on previous position and force traces of the imprint head.
* Using the force disturbance model, a disturbance force is determined for each wafer in a predetermined motion sequence.
* A residual force offset measurement is performed to determine the actual force applied to each wafer.
* The force disturbance model is used to calculate the disturbance force applied to each field of the wafer.
* An adjustment is made to the residual force offset measurement.
* Finally, an imprint force is applied to the film on each wafer based on the adjusted disturbance force and a desired force.

Potential applications of this technology:

* Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices, where precise imprinting of patterns on wafers is crucial.
* Nanotechnology: The method can also be applied in nanotechnology processes that require accurate imprinting of nanostructures on various substrates.

Problems solved by this technology:

* Inaccurate imprint force: The method addresses the issue of incorrect imprint force during the imprinting process, which can lead to defective patterns or damage to the wafer.
* Variations in force application: By considering position traces and force disturbance models, the method helps to compensate for variations in force application across different wafers and fields.

Benefits of this technology:

* Improved imprinting accuracy: The method ensures that the desired force is accurately applied to the film on each wafer, resulting in precise patterns and reduced defects.
* Enhanced process control: By accounting for force disturbances and making adjustments, the method improves the overall control and consistency of the imprinting process.


==Original Abstract Submitted==

A method for correcting a final imprint force FIF in an imprint process is provided. Position traces of an imprint head exercising along a predetermined trajectory are obtained. A force disturbance model is established based on prior position and force traces of the imprint head. A disturbance force Fis using a predetermined motion sequence based on the force disturbance model for wafer i, where i=1 to n. A residual force offset (RFO) measurement is performed to determine an actual force Fapplied to wafer i. A disturbance force Fapplied to a field j of the wafer i is calculated using the force disturbance model, where j=1 to m. An adjustment is applied to the RFO measurement. An imprint force is applied to a film on the wafer i with the imprint head based on an output of the adjustment applied to Fand a desired force to be applied to the film on the wafer.



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