17525511. METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY simplified abstract (CANON KABUSHIKI KAISHA)

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METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

Nilabh K. Roy of Austin TX (US)

Mario Johannes Meissl of Austin TX (US)

METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17525511 titled 'METHOD FOR IMPROVING ACCURACY OF IMPRINT FORCE APPLICATION IN IMPRINT LITHOGRAPHY

Simplified Explanation

The patent application describes a method for correcting the final imprint force in an imprint process. Here are the key points:

  • The method involves obtaining position traces of an imprint head as it moves along a predetermined trajectory.
  • A force disturbance model is created based on previous position and force traces of the imprint head.
  • Using the force disturbance model, a disturbance force is determined for each wafer in a predetermined motion sequence.
  • A residual force offset measurement is performed to determine the actual force applied to each wafer.
  • The force disturbance model is used to calculate the disturbance force applied to each field of the wafer.
  • An adjustment is made to the residual force offset measurement.
  • Finally, an imprint force is applied to the film on each wafer based on the adjusted disturbance force and a desired force.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices, where precise imprinting of patterns on wafers is crucial.
  • Nanotechnology: The method can also be applied in nanotechnology processes that require accurate imprinting of nanostructures on various substrates.

Problems solved by this technology:

  • Inaccurate imprint force: The method addresses the issue of incorrect imprint force during the imprinting process, which can lead to defective patterns or damage to the wafer.
  • Variations in force application: By considering position traces and force disturbance models, the method helps to compensate for variations in force application across different wafers and fields.

Benefits of this technology:

  • Improved imprinting accuracy: The method ensures that the desired force is accurately applied to the film on each wafer, resulting in precise patterns and reduced defects.
  • Enhanced process control: By accounting for force disturbances and making adjustments, the method improves the overall control and consistency of the imprinting process.


Original Abstract Submitted

A method for correcting a final imprint force FIF in an imprint process is provided. Position traces of an imprint head exercising along a predetermined trajectory are obtained. A force disturbance model is established based on prior position and force traces of the imprint head. A disturbance force Fis using a predetermined motion sequence based on the force disturbance model for wafer i, where i=1 to n. A residual force offset (RFO) measurement is performed to determine an actual force Fapplied to wafer i. A disturbance force Fapplied to a field j of the wafer i is calculated using the force disturbance model, where j=1 to m. An adjustment is applied to the RFO measurement. An imprint force is applied to a film on the wafer i with the imprint head based on an output of the adjustment applied to Fand a desired force to be applied to the film on the wafer.

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