There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:Punyashloka Debashis of Hillsboro OR (US)
Subcategories
This category has only the following subcategory.
M
Pages in category "Punyashloka Debashis of Hillsboro OR (US)"
The following 20 pages are in this category, out of 20 total.
1
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 18148240. CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract (Intel Corporation)
- 18148617. TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC simplified abstract (Intel Corporation)
- 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
- 18343203. P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES (Intel Corporation)
- 18344022. NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES (Intel Corporation)
- 18345127. TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS (Intel Corporation)
- 18346212. TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT (Intel Corporation)
- 18346227. PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE AND DRAIN (Intel Corporation)
I
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240206348). PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY MATERIALS simplified abstract
- Intel corporation (20240222475). TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC simplified abstract
- Intel corporation (20240222506). FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract
- Intel corporation (20240224814). CHIRAL COUPLING-BASED VALLEYTRONIC MAGNETOELECTRIC SPIN-ORBIT DEVICES simplified abstract
- Intel corporation (20240429301). PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY EPITAXIAL LATERAL OVERGROWTH