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Category:H10B41/70
Subcategories
This category has the following 7 subcategories, out of 7 total.
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Pages in category "H10B41/70"
The following 25 pages are in this category, out of 25 total.
1
- 18347542. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18538009. SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18586255. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18675249. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18752086. TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18965260. SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18974962. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18982263. MEMORY DEVICE AND SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 19002110. SEMICONDUCTOR DEVICE (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 19012445. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER (Samsung Electronics Co., Ltd.)
S
- Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
- Samsung electronics co., ltd. (20250151331). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Semiconductor energy laboratory co., ltd. (20250120181). MEMORY DEVICE AND SEMICONDUCTOR DEVICE
- Semiconductor energy laboratory co., ltd. (20250124962). SEMICONDUCTOR DEVICE
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on April 10th, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on April 17th, 2025
T
- Taiwan semiconductor manufacturing company, ltd. (20240257874). NON-VOLATILE MEMORY CELL STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20240257874). NON-VOLATILE MEMORY CELL STRUCTURES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347645). TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 17th, 2024