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Category:H10B41/23
Pages in category "H10B41/23"
The following 12 pages are in this category, out of 12 total.
1
- 18586255. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18676056. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
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- Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- SK hynix Inc. patent applications on March 6th, 2025
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- Taiwan semiconductor manufacturing company, ltd. (20240257874). NON-VOLATILE MEMORY CELL STRUCTURES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381653). MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 1st, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024