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Show new changes starting from 10:32, 13 May 2025
 
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9 May 2025

N    07:34  19012445. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER (Samsung Electronics Co., Ltd.) diffhist +5,013 Wikipatents talk contribs (Creating a new page)
N    05:03  Samsung Electronics Co., Ltd. patent applications on May 8th, 2025 diffhist +368,158 Wikipatents talk contribs (Creating a new page)
N    05:01  Samsung electronics co., ltd. (20250151331). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER diffhist +5,028 Wikipatents talk contribs (Creating a new page)
N    05:01  Category:Chang Hwan Choi of Seoul KR diffhist +986 Wikipatents talk contribs (Creating a new page)
N    05:01  Category:Hyeon Joo Seul of Seoul KR diffhist +984 Wikipatents talk contribs (Creating a new page)
N    05:01  Category:Jae Kyeong Jeong of Seoul KR diffhist +988 Wikipatents talk contribs (Creating a new page)
N    05:01  Category:Yun Heub Song of Seoul KR diffhist +982 Wikipatents talk contribs (Creating a new page)

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