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Category:H01L27/092
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Pages in category "H01L27/092"
The following 200 pages are in this category, out of 1,427 total.
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- 17381006. INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17454203. COMB / FISHBONE METAL STACK simplified abstract (QUALCOMM Incorporated)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457448. NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17461202. THIN FILM TRANSISTOR BASED TEMPERATURE SENSOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17522015. BOTTOM CONTACT FOR STACKED GAA FET simplified abstract (International Business Machines Corporation)
- 17522974. GATE-CUT AND SEPARATION TECHNIQUES FOR ENABLING INDEPENDENT GATE CONTROL OF STACKED TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17541529. Fork Sheet with Reduced Coupling Effect simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547775. MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551829. ANGLED VIA FOR TIP TO TIP MARGIN IMPROVEMENT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17574043. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643014. UNIPOLAR-FET IMPLEMENTATION IN STACKED-FET CMOS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17655321. Integration of Multiple Transistors Having Fin and Mesa Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17677329. METHODS OF FORMING INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND INTEGRATED CIRCUIT DEVICES FORMED BY THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17677929. DEVICE WITH ALTERNATE COMPLEMENTARY CHANNELS AND FABRICATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17683589. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17685593. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17691438. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17707015. INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT HAVING HETEROGENEOUS GATE STRUCTURES AND METHOD OF FABRICATING INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17708894. SEAL RING STRUCTURE FOR SEMICONDUCTOR DEVICE AND THE METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17730797. Semiconductor Devices and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17736367. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17804397. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17832900. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17846606. INTEGRATED CIRCUIT INCLUDING STANDARD CELL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17847628. LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17851960. INTEGRATED CIRCUIT STRUCTURES HAVING AOI GATES WITH ROUTING ACROSS NANOWIRES simplified abstract (Intel Corporation)
- 17858844. FLIP-FLOP WITH TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES, SEMICONDUCTOR DEVICE INCLUDING SAME AND METHODS OF MANUFACTURING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17866966. MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17876389. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876737. DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17878825. INTEGRATED CIRCUIT CELL WITH DUAL ROW, BACK-TO-BACK, TRANSISTOR BODY TIES simplified abstract (QUALCOMM Incorporated)
- 17886145. SEMICONDUCTOR DEVICE HAVING MIXED CMOS ARCHITECTURE AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17895323. HYBRID FIN-DIELECTRIC SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897151. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17898184. APPARATUS INCLUDING ADJUSTED WELLS AND METHODS OF MANUFACTURING THE SAME simplified abstract (Micron Technology, Inc.)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
- 17937473. SEMICONDUCTOR DEVICE WITH CMOS INVERTER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17956188. ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract (Intel Corporation)
- 17958205. TRENCH SHIELDED TRANSISTOR simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17970777. SEMICONDUCTOR DEVICE HAVING STEPPED MULTI-STACK TRANSISTOR STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17986276. BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18026833. Tunneling Field Effect Transistor and Manufacturing Method Thereof, Display Panel and Display Apparatus simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 18046518. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18051034. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18054194. STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18056181. INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060056. LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062624. POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (International Business Machines Corporation)
- 18064260. PREVENTING SOURCE/DRAIN EPI MERGE WITHOUT CELL SIZE INCREASE simplified abstract (International Business Machines Corporation)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)
- 18065860. STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT simplified abstract (International Business Machines Corporation)
- 18065965. SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract (International Business Machines Corporation)
- 18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation)
- 18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)
- 18067710. SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 18067748. SEMICONDUCTOR DEVICE WITH BACKSIDE U-SHAPED SILICIDE simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18068992. COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) WITH BALANCED N AND P DRIVE CURRENT simplified abstract (QUALCOMM Incorporated)
- 18070050. NON-OVERLAPPING GATE CONDUCTORS FOR GAA TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18072564. FABRICATION OF INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORMITY AMONG VARYING GATE TRENCH WIDTHS simplified abstract (Intel Corporation)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18080832. SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18080892. DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract (International Business Machines Corporation)
- 18082617. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18083385. DIELECTRIC SEPARATION FOR BACKSIDE POWER RAIL LINES simplified abstract (International Business Machines Corporation)
- 18085768. CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18086303. PRODUCING STRESS IN NANOSHEET TRANSISTOR CHANNELS simplified abstract (International Business Machines Corporation)
- 18087879. METAL GATE CUT WITH HYBRID MATERIAL FILL simplified abstract (Intel Corporation)
- 18088547. SELF-ALIGNED BACKBONE FOR FORKSHEET TRANSISTORS simplified abstract (Intel Corporation)
- 18089634. HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18090048. GATE CUT, AND SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18090828. INTEGRATED CIRCUIT STRUCTURES HAVING ROUTING ACROSS LAYERS OF CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18091714. TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN CHANNEL DIMENSIONS simplified abstract (Intel Corporation)
- 18092677. GATE STACK OF FORKSHEET STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18097247. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18098633. N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET simplified abstract (QUALCOMM Incorporated)
- 18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18110330. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18110488. POWER MANAGEMENT INTEGRATED CIRCUIT AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18115165. POWER SEMICONDUCTOR DEVICE simplified abstract (Hyundai Motor Company)
- 18115165. POWER SEMICONDUCTOR DEVICE simplified abstract (Kia Corporation)
- 18116209. Barrier Layers in Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18121720. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING TUNED UPPER NANOWIRES simplified abstract (Intel Corporation)
- 18121724. INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES WITH PYRAMIDAL CHANNEL STRUCTURES simplified abstract (Intel Corporation)
- 18121731. INTEGRATED CIRCUIT STRUCTURES HAVING SELF-ALIGNED UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES simplified abstract (Intel Corporation)
- 18121869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18123613. BACKSIDE POWER ISLANDS FOR BACKSIDE POWER APPLICATIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18125440. ISOLATED BACKSIDE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract (Intel Corporation)
- 18125455. BRIDGING CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18125512. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18126298. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18130732. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18135530. 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18135598. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18145003. FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE simplified abstract (International Business Machines Corporation)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)
- 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150545. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18150814. SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18151279. Dielectric Walls for Complementary Field Effect Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152007. INTEGRATED CIRCUIT HAVING TRANSISTORS WITH DIFFERENT WIDTH SOURCE AND DRAIN TERMINALS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152421. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153250. INTEGRATED CIRCUIT AND SYSTEM FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18153553. BARRIER LAYER FOR WEAKENED BOUNDARY EFFECT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155392. Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156024. FORMING WRAP AROUND CONTACT WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18156605. NON-TRANSITORY COMPUTER-READABLE MEDIUM, INTEGRATED CIRCUIT DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157591. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157607. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163986. METAL GATE PATTERNING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18165486. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18165624. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18165867. SEMICONDUCTOR DEVICE AND LOGIC DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18169628. SEMICONDUCTOR STRUCTURE WITH HIGH INTEGRATION DENSITY AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170259. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18171508. Semiconductor Device and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18172595. 3D U-SHAPED NANOSHEET DEVICE simplified abstract (Tokyo Electron Limited)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18178665. METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPLICATION simplified abstract (Tokyo Electron Limited)
- 18179511. STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18180720. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18180887. CROSS COUPLED STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18181598. FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION simplified abstract (Intel Corporation)
- 18182412. SELF-ALIGNED VIA IN DOUBLE DIFFUSION BREAK TO CONNECT TO BACKSIDE INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 18182766. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18183189. METHOD AND STRUCTURE OF ACCURATELY CONTROLLING CONTACT GOUGING POSITION simplified abstract (International Business Machines Corporation)
- 18183551. GATE STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18184085. Vertical Transistors Occupying Reduced Chip Area and the Methods Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185232. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR NANOSTRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185394. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185611. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18185941. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18186227. FLEXIBLE SELF-ALIGNED POWER VIA SHAPE WITH GATE CUT FIRST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18186236. BACKSIDE DECOUPLING CAPACITOR INTEGRATION WITH BACKSIDE CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18187233. Semiconductor Devices and Methods of Designing and Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
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