18165624. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wei-Liang Lu of Zhubei City (TW)
Chang-Yin Chen of Hsinchu City (TW)
Jian-Hsuan Zheng of Zhudong Township (TW)
Che-Cheng Chang of Cupertino CA (US)
FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18165624 titled 'FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
The abstract of this patent application describes a method of fabricating a semiconductor structure, involving the formation of a semiconductor fin over a substrate, the creation of an isolation region around the fin, the construction of a dummy gate structure over the fin, and the subsequent replacement of the dummy gate structure with a metal gate structure.
- Formation of a semiconductor fin over a substrate
- Creation of an isolation region around the semiconductor fin
- Construction of a dummy gate structure over the fin
- Replacement of the dummy gate structure with a metal gate structure
- Use of different etchants in the etching processes
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Enhancing semiconductor structure performance - Improving gate structure reliability - Increasing device efficiency
Benefits: - Higher performance capabilities - Enhanced reliability - Improved efficiency
Commercial Applications: Title: "Advanced Semiconductor Structure Fabrication Method" This technology could be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.
Questions about Semiconductor Structure Fabrication Method: 1. How does the use of different etchants in the etching processes contribute to the overall efficiency of the fabrication method? 2. What are the key advantages of replacing the dummy gate structure with a metal gate structure in semiconductor manufacturing processes?
Original Abstract Submitted
A method of fabricating a semiconductor structure includes forming a semiconductor fin over a substrate. The method includes forming a semiconductor fin over a substrate. The method includes forming an isolation region around the semiconductor fin. The method includes forming a dummy gate structure over the semiconductor fin, which further includes performing a first etching process using a first etchant and subsequently performing a second etching process using a second etchant, where the first etchant is different from the second etchant in composition. The method includes forming source/drain features adjacent the dummy gate structure. The method includes replacing the dummy gate structure with a metal gate structure that is interposed between the source/drain features.