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Category:H01L27/088
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Pages in category "H01L27/088"
The following 200 pages are in this category, out of 1,104 total.
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- 17457588. INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17458730. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459065. DIELECTRIC PROTECTION LAYER IN MIDDLE-OF-LINE INTERCONNECT STRUCTURE MANUFACTURING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17459865. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460198. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461618. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17462709. Integrated Circuit Structure with a Reduced Amount of Defects and Methods for Fabricating the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17527355. MULTI-VT NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 17541894. STAGGERED STACKED SEMICONDUCTOR DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545013. INTEGRATING GATE-CUTS AND SINGLE DIFFUSION BREAK ISOLATION POST-RMG USING LOW-TEMPERATURE PROTECTIVE LINERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551950. VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.)
- 17581787. INTEGRATED CIRCUIT WITH CONDUCTIVE VIA FORMATION ON SELF-ALIGNED GATE METAL CUT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17691293. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17693204. INTEGRATED CIRCUIT WITH NANOSTRUCTURE TRANSISTORS AND BOTTOM DIELECTRIC INSULATORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17745423. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17825798. Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17833749. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Micron Technology, Inc.)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837833. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837925. INTEGRATED STANDARD CELL STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17846606. INTEGRATED CIRCUIT INCLUDING STANDARD CELL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17873180. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17883919. FINFETS WITH REDUCED PARASITICS simplified abstract (Micron Technology, Inc.)
- 17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900001. SEMICONDUCTOR STRUCTURE WITH REDUCED PARASITIC CAPACITANCE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943443. GATE CUTS IN A GRATING PATTERN ACROSS AN INTEGRATED CIRCUIT simplified abstract (Intel Corporation)
- 17943564. Large Surface VBPR for Robust Alignment in Advanced Technology Nodes simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17946546. STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract (International Business Machines Corporation)
- 17949861. INTEGRATED CIRCUIT STRUCTURES HAVING GATE CUT PLUG REMOVED FROM TRENCH CONTACT USING ANGLED DIRECTIONAL ETCH simplified abstract (Intel Corporation)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17956114. SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation)
- 17957106. ETCH STOP LAYER FOR METAL GATE CUT simplified abstract (Intel Corporation)
- 17957580. SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract (Intel Corporation)
- 17957654. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation)
- 17958805. SEMICONDUCTOR DEVICE HAVING WORK-FUNCTION METAL AND METHOD OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17960116. INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17969491. SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17994487. SEPARATE EPITAXY IN MONOLITHIC STACKED AND STEPPED NANOSHEETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18050219. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED CONTACT AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18054349. BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062116. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18064352. INTEGRATED CIRCUIT (IC) DEVICE WITH MULTI-PITCH PATTERN FABRICATED THROUGH CROSS-LINKABLE BLOCK COPOLYMER simplified abstract (Intel Corporation)
- 18064362. MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW simplified abstract (Intel Corporation)
- 18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067968. STACKED TRANSISTORS WITH STEPPED CONTACTS simplified abstract (International Business Machines Corporation)
- 18072559. INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING ENHANCED CONTACT AREA simplified abstract (Intel Corporation)
- 18072569. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP BOUNDARY VIA simplified abstract (Intel Corporation)
- 18077394. INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract (Intel Corporation)
- 18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation)
- 18089877. INTEGRATED CIRCUIT STRUCTURES HAVING LOOKUP TABLE DECODERS FOR FPGAS simplified abstract (Intel Corporation)
- 18089931. DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER simplified abstract (Intel Corporation)
- 18090816. INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract (Intel Corporation)
- 18090822. INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL SHARED GATE HIGH-DRIVE THIN FILM TRANSISTORS simplified abstract (Intel Corporation)
- 18091206. SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS simplified abstract (Intel Corporation)
- 18091209. TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GROWTH IN SUPERLATTICE WITH NITRIDES simplified abstract (Intel Corporation)
- 18091607. HIGH-VOLTAGE BASED LOW-POWER, TEMPERATURE DEPENDENT, THIN-OXIDE ONLY ON-CHIP HIGH CURRENT LOW DROP OUT (LDO) REGULATOR simplified abstract (XILINX, INC.)
- 18095080. SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
- 18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097255. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18099405. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18105620. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18105659. SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18107516. HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18121701. INTEGRATED CIRCUIT STRUCTURE WITH BACK-SIDE CONTACT SELECTIVITY simplified abstract (Intel Corporation)
- 18121731. INTEGRATED CIRCUIT STRUCTURES HAVING SELF-ALIGNED UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG FOR TUB GATES simplified abstract (Intel Corporation)
- 18125430. SEMICONDUCTOR DEVICES BETWEEN GATE CUTS AND DEEP BACKSIDE VIAS simplified abstract (Intel Corporation)
- 18125447. GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES simplified abstract (Intel Corporation)
- 18133977. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18138825. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18143187. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150266. COMPOSITE GATE DIELECTRIC FOR HIGH-VOLTAGE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18150814. SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18156624. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH DUMMY FIN STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157448. STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158036. AIR SPACER AND CAPPING STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158505. BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract (International Business Machines Corporation)
- 18159200. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18159462. DEVICE AND METHOD OF FORMING 3D U-SHAPED NANOSHEET CFET simplified abstract (Tokyo Electron Limited)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18166750. SEMICONDUCTOR DEVICE STRUCTURE WITH GATE DIELECTRIC LAYER AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171754. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18174046. SEMICONDUCTOR STRUCTURE WITH HYBRID BONDING AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18177381. SEMICONDUCTOR DEVICES WITH IMPLANTED STI REGIONS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18178406. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18180589. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18184024. Fin Isolation Regions With Improved Depth Distribution and Methods Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18185611. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18187782. INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT simplified abstract (Intel Corporation)
- 18187990. LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES simplified abstract (Intel Corporation)
- 18188020. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18188042. STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188496. CONTACT CUT AND WRAP AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18189442. SELECTIVE CONTACT ON SOURCE AND DRAIN simplified abstract (QUALCOMM Incorporated)
- 18190444. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18195354. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (United Microelectronics Corp.)
- 18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18199541. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18201878. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18201878. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18206187. PROCESS OF FORMING SILICON-CONTAINING FILM AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18209971. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT REVEAL UNIFORMITY (Intel Corporation)
- 18214642. STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE (International Business Machines Corporation)
- 18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18214904. INTEGRATED CIRCUIT STRUCTURES HAVING VERTICAL-TRANSPORT TRANSISTOR WITH BOTTOM SOURCE CONNECTION (Intel Corporation)
- 18215459. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18215743. INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACER LINERS (Intel Corporation)
- 18216476. MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY USING BACKSIDE PASSIVATION LAYER (Intel Corporation)
- 18217012. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18217208. LOW-RESISTANCE VIA STRUCTURES (Intel Corporation)
- 18219107. SEMICONDUCTOR DEVICE WITH DEEP TRENCH ISOLATION AND SHALLOW TRENCH ISOLATION AND FABRICATING METHOD OF THE SAME (UNITED MICROELECTRONICS CORP.)
- 18219232. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18221696. SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCTURE FORMED BASED ON CONTACT ISOLATION LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 18231261. SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME (United Microelectronics Corp.)
- 18233693. 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract (Samsung Electronics Co., Ltd.)
- 18287650. SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS simplified abstract (Mitsubishi Electric Corporation)
- 18296397. FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE simplified abstract (International Business Machines Corporation)
- 18298274. INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18298402. METAL CONTACT CONNECTION THROUGH DIFFUSION BREAK AREA simplified abstract (International Business Machines Corporation)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18299294. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18300421. SELF-ALIGNED CONTACT WITH CT CUT AFTER RMG simplified abstract (International Business Machines Corporation)
- 18301524. GUARD RING STRUCTURE AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18304527. THROUGH VIA WITH GUARD RING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18307259. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18311161. VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18313634. Semiconductor Structure with Contact Rail and Method for Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18328432. Gate Dielectric for Gate Leakage Reduction simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18331296. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18333682. CONTACT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18333758. INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE (Intel Corporation)
- 18334226. SEMICONDUCTOR DEVICES WITH DIFFERENT GATE DIELECTRIC THICKNESSES (QUALCOMM Incorporated)
- 18334486. BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334606. STRUCTURE FOR BACKSIDE SIGNAL AND POWER (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18335380. Source/Drain Contacts and Methods for Forming the Same (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18335525. FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18336066. TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED DIRECT BACKSIDE CONTACT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18336454. DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUFACTURING SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18342090. STACKED TRANSISTORS WITH DIELECTRIC INSULATOR LAYERS (International Business Machines Corporation)
- 18346272. SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18346772. SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18347528. MEMORY DEVICE STRUCTURE AND METHOD (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18347560. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18348967. Cut Metal Gate Refill With Buffer Layer (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
