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Category:H01L23/532
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Pages in category "H01L23/532"
The following 200 pages are in this category, out of 748 total.
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- 17412622. DOUBLE-SIDED STACKED DTC STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17446405. RESISTOR WITHIN A VIA simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17454378. DAMASCENE INTERCONNECT SPACER TO FACILITATE GAP FILL simplified abstract (International Business Machines Corporation)
- 17456016. ANTI-FUSE WITH LATERALLY EXTENDED LINER simplified abstract (International Business Machines Corporation)
- 17457444. TOP VIA WITH PROTECTIVE LINER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17459799. CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461231. STRUCTURE AND METHOD FOR MULTIPLE BEOL K-VALUE DIELECTRIC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17524107. INTERCONNECTS FORMED USING INTEGRATED DAMASCENE AND SUBTRACTIVE ETCH PROCESSING simplified abstract (International Business Machines Corporation)
- 17530971. SELECTIVE METAL RESIDUE AND LINER CLEANSE FOR POST-SUBTRACTIVE ETCH simplified abstract (International Business Machines Corporation)
- 17546682. BARRIER LINER FREE INTERFACE FOR METAL VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548773. DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551457. MEMORY CELL IN WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17589575. METHOD OF OVERLAY MEASUREMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17591144. SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17592629. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643395. ADVANCED METAL INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643408. ACCURATE METAL LINE AND VIA HEIGHT CONTROL FOR TOP VIA PROCESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643434. TOP VIA INTERCONNECT STRUCTURE WITH TEXTURE SUPPRESSION LAYERS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644448. Method to Produce Buried Nb Lines Surrounded by Ti simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17651990. Forming Dielectric Film With High Resistance to Tilting simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17662301. SEMICONDUCTOR DEVICE INCLUDING MULTI-CAPPING LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17679234. INTERCONNECTION STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17699496. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17806570. HIGH ASPECT RATIO BURIED POWER RAIL METALLIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17816505. TECHNIQUES FOR CONCURRENTLY-FORMED CAVITIES IN THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17819538. ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822726. MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17834940. SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17835924. GRAPHENE-METAL HYBRID INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836781. SEMICONDUCTOR DEVICE INCLUDING METAL SURROUNDING VIA CONTACT AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17839447. SEMICONDUCTOR DEVICE INCLUDING DIELECTRICS MADE OF POROUS ORGANIC FRAMEWORKS, AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17862987. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17866917. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17875625. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877350. INTERCONNECT LAYER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877387. INTERCONNECTION STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17884817. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17893770. SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17893966. SEMICONDUCTOR MEMORIES INCLUDING EDGE MATS HAVING FOLDED DIGIT LINES simplified abstract (Micron Technology, Inc.)
- 17895286. Conductive Via With Improved Gap Filling Performance simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897876. SKIP VIA WITH LOCALIZED SPACER simplified abstract (International Business Machines Corporation)
- 17899586. SEMICONDUCTOR DEVICE ASSEMBLIES WITH COPLANAR INTERCONNECT STRUCTURES, AND METHODS FOR MAKING THE SAME simplified abstract (Micron Technology, Inc.)
- 17900151. LOW RESISTANCE INTERCONNECT FEATURES AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933000. INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER simplified abstract (Intel Corporation)
- 17937360. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17944343. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17951474. INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17955803. LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE simplified abstract (International Business Machines Corporation)
- 17956334. MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER simplified abstract (International Business Machines Corporation)
- 17958040. SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation)
- 17958284. INCORPORATION OF SUPERLATTICE SEMI-METALS FOR SCALED INTERCONNECTS simplified abstract (Intel Corporation)
- 17963062. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17970872. Ru Liner above a Barrier Layer simplified abstract (Applied Materials, Inc.)
- 17972923. COPPER FILL FOR HEAT MANAGEMENT IN INTEGRATED CIRCUIT DEVICE simplified abstract (Intel Corporation)
- 18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18054187. METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054637. SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract (Micron Technology, Inc.)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18059398. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18062502. METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18064352. INTEGRATED CIRCUIT (IC) DEVICE WITH MULTI-PITCH PATTERN FABRICATED THROUGH CROSS-LINKABLE BLOCK COPOLYMER simplified abstract (Intel Corporation)
- 18065799. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18079440. Interconnects with Sidewall Barrier Layer Divot Fill simplified abstract (International Business Machines Corporation)
- 18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18088545. GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract (Intel Corporation)
- 18089491. LIQUID METAL WELLS FOR INTERCONNECT ARCHITECTURES simplified abstract (Intel Corporation)
- 18093713. VIA STRUCTURE WITHOUT LINER INTERFACE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18093900. SEMICONDUCTOR DEVICE WITH POLYMER LINER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18094507. SEMICONDUCTOR DEVICE STRUCTURE WITH LINER LAYER HAVING TAPERED SIDEWALL AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18095080. SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE STRUCTURES simplified abstract (Samsung Electronics Co., Ltd.)
- 18097418. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18100570. ELECTRONIC DEVICE simplified abstract (Advanced Semiconductor Engineering, Inc.)
- 18112564. Layered Substrate with Ruthenium Layer and Method for Producing simplified abstract (Applied Materials, Inc.)
- 18117558. CIRCUIT STRUCTURE INCLUDING AT LEAST ONE AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18119947. SEMICONDUCTOR DEVICE WITH FILLING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18119953. SEMICONDUCTOR DEVICE WITH CAPPING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18120172. HIGH DENSITY PACKAGING ELECTROMIGRATION PROTECTION LAYER simplified abstract (Intel Corporation)
- 18132418. SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18134966. POWER MODULE simplified abstract (Hyundai Motor Company)
- 18134966. POWER MODULE simplified abstract (Kia Corporation)
- 18145157. OCTAGONAL INTERCONNECT WIRING FOR ADVANCED LOGIC simplified abstract (International Business Machines Corporation)
- 18146478. ADVANCED PITCH INTERCONNECTS WITH MULTIPLE LOW ASPECT RATIO SEGMENTS simplified abstract (International Business Machines Corporation)
- 18147731. GRAPHENE COATED INTERCONNECTS WITH AIRGAP STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18148543. PACKAGE ARCHITECTURE WITH MEMORY CHIPS HAVING DIFFERENT PROCESS REGIONS simplified abstract (Intel Corporation)
- 18149829. SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING simplified abstract (Applied Materials, Inc.)
- 18153912. LOW-STRESS PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154540. SEMICONDUCTOR DEVICE STRUCTURE WITH PROTECTION CAP simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162103. SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18166130. CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18169984. SEMICONDUCTOR STRUCTURES INCLUDING METAL WIRES WITH EDGE CURVATURE simplified abstract (International Business Machines Corporation)
- 18170933. ETCHING-DAMAGE-FREE INTERMETAL DIELECTRIC LAYER WITH THERMAL DISSIPATION FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171508. Semiconductor Device and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171795. SUBTRACTIVE METAL VIA WITH METAL BRIDGE simplified abstract (International Business Machines Corporation)
- 18171839. SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18179421. WIRING STRUCTURE FOR ADVANCED INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18179676. ALUMINUM STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18185481. AIR GAP IN BEOL INTERCONNECT simplified abstract (International Business Machines Corporation)
- 18185587. SEMICONDUCTOR DEVICE AND METHODS OF FORMATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18186656. METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION simplified abstract (Applied Materials, Inc.)
- 18187738. TOP VIA INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188577. STITCHED GUARD RINGS WITH OVERLAY ERROR RESILIENCY simplified abstract (Intel Corporation)
- 18190024. BACK-END-OF-LINE (BEOL) INTERCONNECTS WITH DIFFERENT AIRGAP HEIGHTS AND METAL TRACE CORNER PROTECTION STRUCTURES simplified abstract (QUALCOMM Incorporated)
- 18197846. Interlayer for Resistivity Reduction in Metal Deposition Applications simplified abstract (Applied Materials, Inc.)
- 18204241. METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE, AND SEMICONDUCTOR PACKAGE simplified abstract (Samsung Electronics Co., Ltd.)
- 18209820. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18211283. TIGHT PITCH DIRECTIONAL SELECTIVE VIA GROWTH (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18216914. CONDUCTIVE LINES HAVING CONDUCTIVE METAL LINER FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18217724. SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTION STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18219244. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18220886. INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18229640. Semiconductor structure and forming method thereof (United Microelectronics Corp.)
- 18232894. INTEGRATED CIRCUIT DEVICE INCLUDING INTERCONNECTION STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18234042. SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18237015. SEMICONDUCTOR DIE STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE SAME (NANYA TECHNOLOGY CORPORATION)
- 18237174. SEMICONDUCTOR DEVICE CIRCUITRY FORMED THROUGH VOLUMETRIC EXPANSION simplified abstract (Micron Technology, Inc.)
- 18275312. SEMICONDUCTOR PACKAGE simplified abstract (LG INNOTEK CO., LTD.)
- 18291532. SELECTIVE DEPOSITION OF GRAPHENE ON COBALT-CAPPED COPPER DUAL DAMASCENE INTERCONNECT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18296056. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18307109. INTERCONNECTION STRUCTURE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18310300. METAL WIRING OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18330672. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18335838. METAL-INSULATOR-METAL STRUCTURES AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18339569. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18346495. CAPACITOR STRUCTURE INCLUDING WORK FUNCTION METAL LAYERS AND METHODS OF FORMATION (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18346999. TERRACED CONDUCTOR STRUCTURE FOR SEMICONDUCTOR DEVICES (International Business Machines Corporation)
- 18348092. PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18348211. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18348777. SINGLE-STEP VIA-LAST PROCESS FOR MULTI-STACK WAFERS (QUALCOMM Incorporated)
- 18351888. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18357403. MATERIAL FOR METAL LINE IN SEMICONDUCTOR DEVICE, METAL LINE IN SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18366684. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING SEPARATION PATTERNS (SK hynix Inc.)
- 18366814. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18369190. INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18369755. SEMICONDUCTOR WAFER FABRICATION WITH POLYIMIDE TO GRAPHENE CONVERSION (NXP USA, Inc.)
- 18369757. SEMICONDUCTOR WAFER FABRICATION WITH EXPOSURE DEFINED GRAPHENE FEATURES (NXP USA, Inc.)
- 18373392. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18378182. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18380325. SEMICONDUCTOR DEVICE WITH POLYMER LINER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18380330. SEMICONDUCTOR DEVICE STRUCTURE WITH LINER LAYER HAVING TAPERED SIDEWALL AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18380883. SEMICONDUCTOR DEVICE WITH FILLING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18380901. CIRCUIT STRUCTURE INCLUDING AT LEAST ONE AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18380930. SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18381630. Tsv structure and fabricating method of the same (UNITED MICROELECTRONICS CORP.)
- 18388275. SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (MEDIATEK Inc.)
- 18389625. INTEGRATED CIRCUIT DEVICE STRUCTURES AND DOUBLE-SIDED ELECTRICAL TESTING simplified abstract (Intel Corporation)
- 18391914. SEMICONDUCTOR DEVICE AND POWER AMPLIFIER INCLUDING THE SAME simplified abstract (Samsung Electro-Mechanics Co., Ltd.)
- 18397476. SEMICONDUCTOR DEVICES WITH THERMOELECTRIC COOLER simplified abstract (Texas Instruments Incorporated)
- 18398370. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18398680. SEMICONDUCTOR DEVICE HAVING ELECTRODE PADS ARRANGED BETWEEN GROUPS OF EXTERNAL ELECTRODES simplified abstract (ROHM CO., LTD.)
- 18401815. Conductive Traces in Semiconductor Devices and Methods of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403044. INTERCONNECT STRUCUTRE WITH PROTECTIVE ETCH-STOP simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18405023. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18409491. SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18413761. SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18415086. RESISTOR WITHIN A VIA simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18422726. INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18431346. REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432064. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435294. MULTIPLE-STACK THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18444959. Vias for Cobalt-Based Interconnects and Methods of Fabrication Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18446827. VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18447539. CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18456927. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18467859. MITIGATING PROXIMITY EFFECTS OF DEEP TRENCH VIAS (Intel Corporation)
- 18468366. AIRGAPS IN TOP LAYERS OF SEMICONDUCTOR DEVICES (QUALCOMM Incorporated)
- 18471715. INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MATERIAL, ELECTRONIC DEVICES INCLUDING INTERCONNECTION LAYER STRUCTURES, AND ELECTRONIC APPARATUSES INCLUDING ELECTRONIC DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18479211. MATERIAL FOR METAL LINE, METAL LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18483748. SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract (MICRON TECHNOLOGY, INC.)
- 18486574. WIRING MATERIAL FOR SEMICONDUCTOR DEVICE, WIRING FOR SEMICONDUCTOR DEVICE INCLUDING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE WIRING simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491711. MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18494183. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18504136. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504901. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING STAIR STEP STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18509629. SEMICONDUCTOR DIE STUCTURE WITH AIR GAPS AND METHOD FOR PREPARING THE SAME (NANYA TECHNOLOGY CORPORATION)
- 18511102. ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18512139. SIDEWALL SPACER STRUCTURE ENCLOSING CONDUCTIVE WIRE SIDEWALLS TO INCREASE RELIABILITY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18512894. LOW RESISTIVITY GAPFILL simplified abstract (Applied Materials, Inc.)
- 18515130. SEMICONDUCTOR INTERCONNECTION STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18515536. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516373. HYBRID CONDUCTIVE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518081. Metal Contact Structure and Method of Forming the Same in a Semiconductor Device simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519516. SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521994. INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18524627. FLASH MEMORY STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18534333. POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE simplified abstract (Applied Materials, Inc.)
- 18535143. SEMICONDUCTOR DEVICE HAVING A REINFORCING INSULATING LAYER CORRESPONDING TO A VIA simplified abstract (Samsung Electronics Co., Ltd.)
- 18535623. INTERCONNECT WIRES INCLUDING RELATIVELY LOW RESISTIVITY CORES simplified abstract (Intel Corporation)
- 18544812. CONTACT RESISTANCE REDUCTION BY INTEGRATION OF MOLYBDENUM WITH TITANIUM simplified abstract (Applied Materials, Inc.)