18166130. CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsiu-Wen Hsueh of Taichung City (TW)
An-Jiao Fu of Taipei City (TW)
Chii-Ping Chen of Hsinchu City (TW)
Jen-Hung Wang of Zhubei City (TW)
CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166130 titled 'CONDUCTIVE STRUCTURE IN SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
The abstract describes a method for manufacturing a semiconductor structure that includes various layers and components such as aluminum-containing layer, etch stop layer, carbon-containing dielectric layer, metal line, conductive via, and barrier layer.
- Aluminum-containing layer is the base layer of the semiconductor structure.
- Etch stop layer is formed over the aluminum-containing layer to prevent over-etching.
- Carbon-containing dielectric layer is formed over the etch stop layer.
- Metal line is formed in the upper portion of the carbon-containing dielectric layer.
- Conductive via is formed in the lower portion of the carbon-containing dielectric layer, passing through the etch stop layer and aluminum-containing layer.
- Barrier layer is interposed between the sidewalls of the metal line and conductive via and the carbon-containing dielectric layer.
Potential Applications: - Semiconductor manufacturing industry - Electronics industry - Integrated circuit design and production
Problems Solved: - Enhanced performance and reliability of semiconductor structures - Improved conductivity and signal transmission within the structure
Benefits: - Increased efficiency in semiconductor manufacturing processes - Higher quality and durability of semiconductor structures - Enhanced functionality of electronic devices
Commercial Applications: - Production of advanced semiconductor devices - Development of high-performance electronic components - Implementation in various consumer electronics and industrial applications
Questions about the technology: 1. How does the barrier layer contribute to the overall performance of the semiconductor structure? 2. What are the specific advantages of using a carbon-containing dielectric layer in this manufacturing method?
Frequently Updated Research: - Ongoing studies on optimizing the composition and properties of the carbon-containing dielectric layer for improved performance in semiconductor structures.
Original Abstract Submitted
A method for manufacturing a semiconductor structure is provided. The semiconductor structure includes an aluminum-containing layer and an etch stop layer formed over the aluminum-containing layer. The semiconductor structure further includes a carbon-containing dielectric layer formed over the etch stop layer. The semiconductor structure further includes a metal line formed in an upper portion of the carbon-containing dielectric layer. The semiconductor structure further includes a conductive via formed in a lower portion of the carbon-containing dielectric layer and through the etch stop layer and the aluminum-containing layer. The semiconductor structure further includes a barrier layer interposing the first sidewall of the metal line and carbon-containing dielectric layer and interposing the second sidewall of the conductive via and the carbon-containing dielectric layer.
