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Category:H01L21/76
Subcategories
This category has the following 4 subcategories, out of 4 total.
M
S
T
Y
Pages in category "H01L21/76"
The following 13 pages are in this category, out of 13 total.
1
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18596885. Gate Bar in Isolation Region of Gate Layout and Method of Fabrication Thereof (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18987170. SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (DENSO CORPORATION)
B
T
- Taiwan semiconductor manufacturing co., ltd. (20240097034). METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan semiconductor manufacturing company, ltd. (20250133806). Gate Bar in Isolation Region of Gate Layout and Method of Fabrication Thereof
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 24th, 2025
U
- US Patent Application 18224691. SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS simplified abstract
- US Patent Application 18360546. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18446183. Semiconductor Device with Air Gaps and Method of Fabrication Thereof simplified abstract