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Category:H01L21/3213
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Pages in category "H01L21/3213"
The following 200 pages are in this category, out of 321 total.
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- 17377634. METHOD FOR IMPROVED POLYSILICON ETCH DIMENSIONAL CONTROL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17543964. BEOL INTERCONNECT SUBTRACTIVE ETCH SUPER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17629358. MANUFACTURING METHOD OF METAL GRID, THIN FILM SENSOR AND MANUFACTURING METHOD OF THIN FILM SENSOR simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17643408. ACCURATE METAL LINE AND VIA HEIGHT CONTROL FOR TOP VIA PROCESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17747423. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17808175. ANISOTROPIC WET ETCHING IN PATTERNING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17836820. METHOD FOR FABRICATING MASK simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17849345. INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CIRCUIT BLOCKS IN INTEGRATED CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17893783. PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17896726. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17935161. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE simplified abstract (Changxin Memory Technologies, Inc.)
- 17946609. METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE simplified abstract (TOKYO ELECTRON LIMITED)
- 17963687. ISOTROPIC SILICON NITRIDE REMOVAL simplified abstract (Applied Materials, Inc.)
- 17969368. MODIFYING PATTERNED FEATURES USING A DIRECTIONAL ETCH simplified abstract (Applied Materials, Inc.)
- 17969773. SELF-ALIGNED ZERO TRACK SKIP simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18070030. Method of Conductive Material Deposition simplified abstract (Tokyo Electron Limited)
- 18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18090505. METHOD OF PERFORMING SELECTIVE ETCH ON ARRAY SUBSTRATE simplified abstract (INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE)
- 18091022. ENABLING COPPER RECESS FLATTENING THROUGH A DFR PATTERNING PROCESSES simplified abstract (Intel Corporation)
- 18091197. SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 18094484. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18112252. TREATMENTS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS simplified abstract (Applied Materials, Inc.)
- 18123095. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18147636. ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract (Intel Corporation)
- 18150814. SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18153912. LOW-STRESS PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155933. TUNABLE STRUCTURE PROFILE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18156123. Reduction of Line Wiggling simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18158916. METHODS FOR REDUCING MICRO AND MACRO SCALLOPING ON SEMICONDUCTOR DEVICES simplified abstract (Applied Materials, Inc.)
- 18169928. STEPPED ISOLATION REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171992. SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
- 18209732. DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES (Applied Materials, Inc.)
- 18211044. COPPER REFLOW BY SURFACE MODIFICATION (Applied Materials, Inc.)
- 18216514. TRANSISTOR WITH CHANNEL-SYMMETRIC GATE (Intel Corporation)
- 18252032. METHOD FOR SELECTIVELY ETCHING A METAL COMPONENT simplified abstract (Microsoft Technology Licensing, LLC)
- 18295433. METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18298629. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED CONDUCTIVE FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18300859. ADDITIVE FOR LITHOGRAPHY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18346840. METHOD OF FORMING MARK ON SEMICONDUCTOR DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18347634. METHOD OF PREVENTING PATTERN COLLAPSE (Tokyo Electron Limited)
- 18357307. Parasitic Capacitance Reduction simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18373392. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18373455. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18398598. METHODS FOR SELECTIVELY FORMING A PASSIVATION LAYER ON A DIELECTRIC SURFACE RELATIVE TO A METALLIC SURFACE, METHODS FOR UTILIZING A PASSIVATION LAYER, AND RELATED STRUCTURES INCLUDING A PASSIVATION LAYER simplified abstract (ASM IP Holding B.V.)
- 18401988. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403204. INHIBITOR FOR SELECTIVELY DEPOSITING THIN FILM AND METHOD FOR SELECTIVELY DEPOSITING THIN FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18409031. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18410016. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18419879. HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS simplified abstract (Samsung SDI Co., Ltd.)
- 18420184. APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18423577. TOOLS AND METHODS FOR SUBTRACTIVE METAL PATTERNING simplified abstract (Intel Corporation)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18433251. METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433899. SYSTEM AND METHOD FOR DIAGNOSING PLASMA CHAMBER simplified abstract (ASM IP Holding B.V.)
- 18434121. Semiconductor Patterning and Resulting Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18454219. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18456652. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18457983. PATTERN FORMATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND IMPRINT APPARATUS simplified abstract (Kioxia Corporation)
- 18458056. PATTERN FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18458122. INTERCONNECTION MEMBER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Kabushiki Kaisha Toshiba)
- 18458122. INTERCONNECTION MEMBER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18462804. CHEMICAL LIQUID AND TREATMENT METHOD simplified abstract (FUJIFILM Corporation)
- 18463754. COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED simplified abstract (FUJIFILM Corporation)
- 18465376. CIRCULAR-SHAPED RESISTOR (International Business Machines Corporation)
- 18479211. MATERIAL FOR METAL LINE, METAL LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18493614. DEPOSITING A CARBON HARDMASK BY HIGH POWER PULSED LOW FREQUENCY RF simplified abstract (Lam Research Corporation)
- 18510991. CONTROL GATE STRAP LAYOUT TO IMPROVE A WORD LINE ETCH PROCESS WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18512923. METHOD AND SYSTEM FOR PROCESSING SUBSTRATES simplified abstract (Samsung Electronics Co., Ltd.)
- 18520369. IN-SITU ETCH MATERIAL SELECTIVITY DETECTION SYSTEM simplified abstract (Applied Materials, Inc.)
- 18521140. Footing Removal in Cut-Metal Process simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524533. METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524767. FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING simplified abstract (TOKYO ELECTRON LIMITED)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18566245. USE OF A COMPOSITION AND A PROCESS FOR SELECTIVELY ETCHING SILICON simplified abstract (BASF SE)
- 18585576. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18586037. ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION simplified abstract (Samsung Electronics Co., Ltd.)
- 18586425. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE simplified abstract (KIOXIA CORPORATION)
- 18595554. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18597065. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18599374. FIELD EFFECT TRANSISTOR, PREPARATION METHOD THEREOF, AND ELECTRONIC CIRCUIT simplified abstract (Huawei Technologies Co., Ltd.)
- 18602230. METHOD FOR DICING A SEMICONDUCTOR WAFER simplified abstract (STMicroelectronics International N.V.)
- 18605141. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18612457. ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18615403. GATE STRUCTURE AND PATTERNING METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18620002. Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 18624954. WAFER BONDING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18661874. Conductive Feature Formation and Structure simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18662083. SEMI-DAMASCENE STRUCTURE WITH DIELECTRIC HARDMASK LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18666835. SEMICONDUCTOR DEVICE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18668038. SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRCUITS simplified abstract (Intel Corporation)
- 18668329. ETCH STOP LAYER FOR MEMORY DEVICE FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18671164. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18675030. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18677372. ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18731181. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18745323. SEMICONDUCTOR DEVICE ACTIVE REGION PROFILE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18747623. NON-CONFORMAL CAPPING LAYER AND METHOD FORMING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18747951. SUBSTRATE PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18748250. CONTACT AND VIA STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749029. SEMICONDUCTOR DEVICE HAVING CUT METAL GATE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749899. SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18750176. ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME (Samsung Electronics Co., Ltd.)
- 18817646. METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS (Applied Materials, Inc.)
- 18828277. SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS (Kioxia Corporation)
- 18955171. BOTTOM LATERAL EXPANSION OF CONTACT PLUGS THROUGH IMPLANTATION (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18955561. NESTED AND NON-NESTED SEI MESSAGES IN VIDEO BITSTREAMS (BEIJING BYTEDANCE NETWORK TECHNOLOGY CO., LTD.)
- 18957283. TIN OXIDE MANDRELS IN PATTERNING (Lam Research Corporation)
- 18962707. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18966227. ETCH METHOD FOR OPENING A SOURCE LINE IN FLASH MEMORY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18973225. DEVICE WITH A RECESSED GATE ELECTRODE THAT HAS HIGH THICKNESS UNIFORMITY (Taiwan Semiconductor Manufacturing Co., Ltd.)
2
A
- Applied materials, inc. (20240249936). METHODS FOR REDUCING MICRO AND MACRO SCALLOPING ON SEMICONDUCTOR DEVICES simplified abstract
- Applied materials, inc. (20240282585). TREATMENTS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS simplified abstract
- Applied materials, inc. (20240420950). DENSIFIED SEAM-FREE SILICON-CONTAINING MATERIAL GAP FILL PROCESSES
- Applied materials, inc. (20240420966). COPPER REFLOW BY SURFACE MODIFICATION
- Applied materials, inc. (20250095990). METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS
- Applied Materials, Inc. patent applications on August 22nd, 2024
- Applied Materials, Inc. patent applications on December 19th, 2024
- Applied Materials, Inc. patent applications on February 20th, 2025
- Applied Materials, Inc. patent applications on February 6th, 2025
- Applied Materials, Inc. patent applications on July 25th, 2024
- Applied Materials, Inc. patent applications on March 20th, 2025
- Applied Materials, Inc. patent applications on March 6th, 2025
B
F
G
H
I
- Intel corporation (20240162058). TOOLS AND METHODS FOR SUBTRACTIVE METAL PATTERNING simplified abstract
- Intel corporation (20240222073). ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract
- Intel corporation (20240222137). ENABLING COPPER RECESS FLATTENING THROUGH A DFR PATTERNING PROCESSES simplified abstract
- Intel corporation (20240222441). SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES simplified abstract
- Intel corporation (20240304543). SUBTRACTIVELY PATTERNED INTERCONNECT STRUCTURES FOR INTEGRATED CIRCUITS simplified abstract
- Intel corporation (20240332088). MODULATION OF CHIP PERFORMANCE BY CONTROLLING TRANSISTOR GATE PROFILE simplified abstract
- Intel corporation (20240332290). TRANSISTOR WITH CHANNEL-SYMMETRIC GATE simplified abstract
- Intel corporation (20250006810). TRANSISTOR WITH CHANNEL-SYMMETRIC GATE
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on July 4th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- Intel Corporation patent applications on September 12th, 2024
- International business machines corporation (20240136281). SELF-ALIGNED ZERO TRACK SKIP simplified abstract
- International business machines corporation (20240234306). SELF-ALIGNED ZERO TRACK SKIP simplified abstract
- International business machines corporation (20240234415). SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract
- International business machines corporation (20250089347). CIRCULAR-SHAPED RESISTOR
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on April 25th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on February 1st, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 11th, 2024
- International Business Machines Corporation patent applications on March 13th, 2025
K
- Kabushiki kaisha toshiba (20240321779). INTERCONNECTION MEMBER AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
- Kioxia corporation (20240094624). PATTERN FORMATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND IMPRINT APPARATUS simplified abstract
- Kioxia corporation (20240096607). SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract
- Kioxia corporation (20240096644). PATTERN FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract
- Kioxia corporation (20240096659). SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kioxia corporation (20240297078). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF SEPARATING SUBSTRATE simplified abstract
- Kioxia corporation (20250098248). SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
- KIOXIA CORPORATION patent applications on September 5th, 2024
M
S
- Samsung electronics co., ltd. (20240213023). METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240222201). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240243010). INHIBITOR FOR SELECTIVELY DEPOSITING THIN FILM AND METHOD FOR SELECTIVELY DEPOSITING THIN FILM simplified abstract
- Samsung electronics co., ltd. (20240266291). MATERIAL FOR METAL LINE, METAL LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240282573). METHOD AND SYSTEM FOR PROCESSING SUBSTRATES simplified abstract
- Samsung electronics co., ltd. (20240297072). SEMI-DAMASCENE STRUCTURE WITH DIELECTRIC HARDMASK LAYER simplified abstract
- Samsung electronics co., ltd. (20240313066). METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240315030). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240318077). ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240318078). ETCHING COMPOSITION FOR TITANIUM-CONTAINING LAYER, ETCHING METHOD OF ETCHING TITANIUM-CONTAINING LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE ETCHING COMPOSITION simplified abstract
- Samsung electronics co., ltd. (20240339334). SUBSTRATE PROCESSING APPARATUS simplified abstract
- Samsung electronics co., ltd. (20240429065). METHOD OF PATTERNING ELEMENTAL METALS
- Samsung electronics co., ltd. (20250011650). ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME
- Samsung electronics co., ltd. (20250020998). PHOTORESIST COMPOSITIONS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME
- Samsung electronics co., ltd. (20250022797). INTERCONNECT STRUCTURE INCLUDING METAL LINE AND TOP VIA FORMED THROUGH DIFFERENT PROCESSES
- Samsung electronics co., ltd. (20250079297). SEMICONDUCTOR DEVICES
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on August 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 26th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024