17896726. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yu-Lien Huang of Hsinchu County (TW)
Chih-Cheng Liu of Hsinchu (TW)
Tze-Liang Lee of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17896726 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The method described in the patent application involves using an organometallic material in a photoresist layer to pattern a target layer using extreme ultraviolet (EUV) radiation.
- Depositing a photoresist layer containing an organometallic material over a target layer
- Exposing the photoresist layer to EUV radiation
- Developing the exposed photoresist layer to create a pattern
- Forming a spacer on the sidewall of the photoresist pattern
- Removing the photoresist pattern
- Patterning the target layer through the spacer
Potential Applications
- Semiconductor manufacturing
- Nanotechnology
- Optoelectronics
Problems Solved
- High-resolution patterning
- Improved precision in target layer patterning
- Enhanced manufacturing processes
Benefits
- Increased efficiency in patterning processes
- Higher quality and precision in pattern formation
- Potential for advancements in various industries such as electronics and optics
Original Abstract Submitted
A method includes depositing a photoresist layer over a target layer, the photoresist layer comprising an organometallic material; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation; developing the exposed photoresist layer to form a photoresist pattern; forming a spacer on a sidewall of the photoresist pattern; removing the photoresist pattern; after removing the photoresist pattern, patterning the target layer through the spacer.