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Category:H01L21/311
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Pages in category "H01L21/311"
The following 200 pages are in this category, out of 653 total.
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- 17460097. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461849. Multiple Gate Field-Effect Transistors Having Various Gate Oxide Thicknesses and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463000. Method of Forming A Semiconductor Device simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17543964. BEOL INTERCONNECT SUBTRACTIVE ETCH SUPER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17589575. METHOD OF OVERLAY MEASUREMENT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17629358. MANUFACTURING METHOD OF METAL GRID, THIN FILM SENSOR AND MANUFACTURING METHOD OF THIN FILM SENSOR simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)
- 17686184. Patterned Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17698476. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING POROUS DIELECTRIC LAYER AND SEMICONDUCTOR DEVICE FABRICATED THEREBY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17719622. METHOD OF FORMING A WIRING AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17733743. METHOD FOR FORMING PHOTORESIST PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17736821. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17742667. COMPOUND FOR FORMING HARDMASK, HARDMASK COMPOSITION INCLUDING THE COMPOUND, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17815854. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17815915. ISOLATION REGIONS WITHIN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17874738. METHOD OF MANUFACTURING INTEGRATED CIRCUIT USING ETCHING PROCESS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17883778. DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17886433. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17893783. PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896726. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897876. SKIP VIA WITH LOCALIZED SPACER simplified abstract (International Business Machines Corporation)
- 17908798. SEMICONDUCTOR MANUFACTURING APPARATUS AND CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS simplified abstract (Hitachi High-Tech Corporation)
- 17932887. SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING simplified abstract (SanDisk Technologies LLC)
- 17932907. SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING simplified abstract (SanDisk Technologies LLC)
- 17945897. SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH simplified abstract (TOKYO ELECTRON LIMITED)
- 17946355. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17946609. METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF MATERIAL FORMED WITHIN FEATURES ON A PATTERNED SUBSTRATE simplified abstract (TOKYO ELECTRON LIMITED)
- 17948768. High Aspect Ratio Contact (HARC) Etch simplified abstract (TOKYO ELECTRON LIMITED)
- 17949083. IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES simplified abstract (Applied Materials, Inc.)
- 17956919. METHOD OF FORMING A PATTERN OF SEMICONDUCTOR DEVICE OF A SEMICONDUCTOR DEVICE ON A SEMICONDUCTOR SUBSTRATE BY USING AN EXTREME ULTRAVIOLET MASK simplified abstract (Samsung Electronics Co., Ltd.)
- 17957580. SQUARE ETCH PROFILES IN HETEROGENOUS MATERIALS OF INTEGRATED CIRCUIT DEVICES simplified abstract (Intel Corporation)
- 17960569. CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL simplified abstract (Applied Materials, Inc.)
- 17969368. MODIFYING PATTERNED FEATURES USING A DIRECTIONAL ETCH simplified abstract (Applied Materials, Inc.)
- 18065965. SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract (International Business Machines Corporation)
- 18080715. MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION simplified abstract (Google LLC)
- 18089691. SUBSTRATE PROCESSING APPARATUS, SIGNAL SOURCE DEVICE, METHOD OF PROCESSING MATERIAL LAYER, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18090031. GATELINE MASK DESIGN FOR REMOVING SACRIFICIAL GATELINE POLYSILICON WITHIN STAIR STEP AREA simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18091188. ELECTRICAL LAYER WITH ROUGHENED SURFACES simplified abstract (Intel Corporation)
- 18095279. DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES simplified abstract (Applied Materials, Inc.)
- 18098791. DRY ETCH OF BORON-CONTAINING MATERIAL simplified abstract (Applied Materials, Inc.)
- 18099357. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18120904. REFLECTIVE INORGANIC THIN FILM FOR HIGH-DENSITY PANEL-SCALE RE-DISTRIBUTION LAYER (RDL) simplified abstract (Intel Corporation)
- 18123095. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18139840. ATOMIC LAYER ETCHING (ALE) APPARATUS AND ALE METHOD BASED ON THE APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18143076. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18145157. OCTAGONAL INTERCONNECT WIRING FOR ADVANCED LOGIC simplified abstract (International Business Machines Corporation)
- 18147636. ION BEAM LITHOGRAPHY AND NANOENGINEERING simplified abstract (Intel Corporation)
- 18150324. METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150861. Volume-less Fluorine Incorporation Method simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18151008. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151223. Method for Etching Features in a Layer in a Substrate simplified abstract (Tokyo Electron Limited)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153912. LOW-STRESS PASSIVATION LAYER simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18156123. Reduction of Line Wiggling simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18156217. ROBOT, APPARATUS INCLUDING ROBOT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE USING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18156900. Plasma Etching with Metal Sputtering simplified abstract (Tokyo Electron Limited)
- 18156917. IN-SITU FOCUS RING COATING simplified abstract (Tokyo Electron Limited)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157939. SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE simplified abstract (GlobalFoundries U.S. Inc.)
- 18162103. SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18166492. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 18167087. SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18169573. SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18169928. STEPPED ISOLATION REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18171678. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18175176. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18177353. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18185587. SEMICONDUCTOR DEVICE AND METHODS OF FORMATION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18190085. SELF-ALIGNED LITHO-ETCH-LITHO-ETCH MANDREL CUT PROCESS FOR ADVANCED FINFET INTERCONNECT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18209035. SELECTIVE SELF-ASSEMBLED MONOLAYER (SAM) REMOVAL (Applied Materials, Inc.)
- 18209711. IN-SITU ETCH AND INHIBITION IN PLASMA ENHANCED ATOMIC LAYER DEPOSITION (Applied Materials, Inc.)
- 18210651. METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL (Applied Materials, Inc.)
- 18210918. METHODS OF SELECTIVELY ETCHING SILICON NITRIDE (Applied Materials, Inc.)
- 18228220. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18236042. METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES (Applied Materials, Inc.)
- 18236748. EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
- 18244169. Integrated Circuitry Comprising A Memory Array Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (MICRON TECHNOLOGY, INC.)
- 18244583. SYSTEMS AND METHODS FOR SELECTIVE METAL-CONTAINING HARDMASK REMOVAL (Applied Materials, Inc.)
- 18274223. NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18296503. MULTI LEVEL CONTACT ETCH simplified abstract (Tokyo Electron Limited)
- 18298629. SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED CONDUCTIVE FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18300859. ADDITIVE FOR LITHOGRAPHY simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18333000. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18337281. METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES (Tokyo Electron Limited)
- 18339567. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SEIKO EPSON CORPORATION)
- 18344583. METHOD FOR FABRICATING ELECTRODE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SK Hynix Inc.)
- 18346840. METHOD OF FORMING MARK ON SEMICONDUCTOR DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18347634. METHOD OF PREVENTING PATTERN COLLAPSE (Tokyo Electron Limited)
- 18355520. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18356322. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18361361. PHOTORESIST AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18369321. HARDMASK STRUCTURE AND METHOD OF FORMING SEMICONDUCTOR STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18370543. VERTICAL MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18372212. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18373455. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18376034. ETCHING GAS AND ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18379667. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
- 18380691. METHOD OF MEASURING OVERLAY OFFSET AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18383543. REFLECTIVE MASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18388419. Gate Structures For Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18389827. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18395715. PHOTOMASK STRUCTURE AND PATTERNING METHOD simplified abstract (Winbond Electronics Corp.)
- 18395788. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18395879. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18397700. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18401800. METHOD FOR FORMING AND USING MASK simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403204. INHIBITOR FOR SELECTIVELY DEPOSITING THIN FILM AND METHOD FOR SELECTIVELY DEPOSITING THIN FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18407536. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18409031. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18410016. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18410031. ETCHING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18416585. METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18417830. THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18419281. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18419281. MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18419879. HARDMASK COMPOSITION, HARDMASK LAYER AND METHOD OF FORMING PATTERNS simplified abstract (Samsung SDI Co., Ltd.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18428230. METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432251. MULTIPLE GATE FIELD-EFFECT TRANSISTORS HAVING VARIOUS GATE OXIDE THICKNESSES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432694. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433251. METHOD OF FABRICATING SEMICONDUCTOR DEVICE WITH REDUCED TRENCH DISTORTIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433787. ETCHING METHOD AND MANUFACTURING METHOD OF A SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18433867. SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433899. SYSTEM AND METHOD FOR DIAGNOSING PLASMA CHAMBER simplified abstract (ASM IP Holding B.V.)
- 18434121. Semiconductor Patterning and Resulting Structures simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18434757. PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18447702. SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18450625. PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)
- 18452311. WASHING SOLUTION AND WASHING METHOD FOR SEMICONDUCTOR SUBSTRATE simplified abstract (FUJIFILM Corporation)
- 18453843. Etch Selectivity Modulation by Fluorocarbon Treatment (Tokyo Electron Limited)
- 18453875. METHOD FOR PLASMA PROCESSING (Tokyo Electron Limited)
- 18455211. REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18456652. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18462804. CHEMICAL LIQUID AND TREATMENT METHOD simplified abstract (FUJIFILM Corporation)
- 18465376. CIRCULAR-SHAPED RESISTOR (International Business Machines Corporation)
- 18466855. MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE (UNITED MICROELECTRONICS CORP.)
- 18467389. METHOD FOR FORMING SEMICONDUCTOR DIE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18474849. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18482401. SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18488729. VERTICAL SEMICONDUCTOR COMPONENT ON THE BASIS OF GALLIUM NITRIDE WITH A STRUCTURED INTERMEDIATE LAYER simplified abstract (Robert Bosch GmbH)
- 18493614. DEPOSITING A CARBON HARDMASK BY HIGH POWER PULSED LOW FREQUENCY RF simplified abstract (Lam Research Corporation)
- 18498851. METHOD FOR FORMING INTERCONNECT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504415. DC Bias in Plasma Process simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18504745. CONTACT PLUGS AND METHODS FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511102. ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511438. Metal-Insulator-Metal Structure simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18514338. MOSFET GATE FORMATION simplified abstract (NEXPERIA B.V.)
- 18516719. LINE-END EXTENSION METHOD AND DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517275. FLEXIBLE MERGE SCHEME FOR SOURCE/DRAIN EPITAXY REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519256. METHOD FOR OBTAINING AN INTEGRATED DEVICE COMPRISING USING AN ETCHING MASK TO DEFINE DICING LINES simplified abstract (Murata Manufacturing Co., Ltd.)
- 18519516. SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18519571. COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING A LAYER COMPRISING AN ALUMINIUM COMPOUND IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER AND/OR COBALT simplified abstract (BASF SE)
- 18521404. METHOD OF MAKING POLYSILICON STRUCTURE INCLUDING PROTECTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521931. METAL SOURCE/DRAIN FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522461. METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524767. FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING simplified abstract (TOKYO ELECTRON LIMITED)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526839. Multi-Gate Device And Related Methods simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18531359. ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES simplified abstract (Intel Corporation)
- 18533635. METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18536945. METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT simplified abstract (NICHIA CORPORATION)
- 18541635. LIQUID CHEMICAL RECYCLE SYSTEM, LIQUID CHEMICAL SUPPLY SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE LIQUID CHEMICAL RECYCLE SYSTEM simplified abstract (Samsung Electronics Co., Ltd.)
- 18547888. FILM FORMING METHOD, PROCESSING APPARATUS, AND PROCESSING SYSTEM simplified abstract (Tokyo Electron Limited)
- 18560422. IN SITU DAMAGE FREE ETCHING OF Ga2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES simplified abstract (Ohio State Innovation Foundation)
- 18568637. DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, AND CLEANING METHOD simplified abstract (Resonac Corporation)
- 18582746. SELECTIVE DEPOSITION OF A PROTECTIVE LAYER TO REDUCE INTERCONNECT STRUCTURE CRITICAL DIMENSIONS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18584540. DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA simplified abstract (Applied Materials, Inc.)
- 18588454. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING CAPACITOR PILLAR simplified abstract (Micron Technology, Inc.)
- 18589750. SUBSTRATE PROCESSING DEVICE simplified abstract (Kioxia Corporation)
- 18590179. METHODS OF FORMING SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18590634. CONTACTS FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18591923. GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18594864. METAL-INSULATOR-METAL STRUCTURE AND METHODS OF FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18595341. SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18595554. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18597065. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18601433. VIA CONNECTION TO A PARTIALLY FILLED TRENCH simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18601541. Method For Forming Resist Underlayer Film And Patterning Process simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
- 18602230. METHOD FOR DICING A SEMICONDUCTOR WAFER simplified abstract (STMicroelectronics International N.V.)
- 18602665. VIA FOR SEMICONDUCTOR DEVICE CONNECTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18603483. SEMICONDUCTOR DEVICE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18603584. ETCHING METHOD, PLASMA PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM simplified abstract (Tokyo Electron Limited)
- 18606335. INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18606739. FABRICATION OF HIGH ASPECT RATIO ELECTRONIC DEVICES WITH MINIMAL SIDEWALL SPACER LOSS simplified abstract (Applied Materials, Inc.)
- 18606791. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18608043. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)
- 18611093. METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18615177. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18616449. SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18618044. Selective Deposition of Barrier Layer simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18620002. Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 18622823. POWER SEMICONDUCTOR DEVICE, METHOD FOR PREPARING POWER SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS simplified abstract (Huawei Technologies Co., Ltd.)
- 18623285. Gate-All-Around Device with Protective Dielectric Layer and Method of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18623697. SELF-ALIGNED BACKSIDE SOURCE CONTACT STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18623816. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18625377. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)